Non-contact mobility measurements of graphene on silicon carbide

Patrick Rebsdorf Whelan, Xiaojing Zhao, Iwona Pasternak, Wlodek Strupinski, Peter Uhd Jepsen, Peter Bøggild*

*Corresponding author for this work

Research output: Contribution to journalJournal articleResearchpeer-review

Abstract

Non-invasive measurement techniques are of utmost importance for characterization of atomically thin materials to speed up the measurement process while avoiding mechanical damage or contamination of the fragile materials. Terahertz time-domain spectroscopy (THz-TDS) provides non-contact measurement of the frequency dependent conductivity of thin films. Here, we expand the applicability of THz-TDS by spatially mapping the carrier density and mobility of epitaxial graphene grown on silicon carbide. The extracted values are compared to Hall measurements and agrees well for homogeneously conducting samples.
Original languageEnglish
JournalMicroelectronic Engineering
Volume212
Pages (from-to)9-12
ISSN0167-9317
DOIs
Publication statusPublished - 2019

Keywords

  • Epitaxial graphene
  • Metrology
  • Terahertz time-domain spectroscopy
  • Mobility
  • Hall measurement
  • 2D materials

Cite this

@article{194649e45ed34128a42048eac82cb449,
title = "Non-contact mobility measurements of graphene on silicon carbide",
abstract = "Non-invasive measurement techniques are of utmost importance for characterization of atomically thin materials to speed up the measurement process while avoiding mechanical damage or contamination of the fragile materials. Terahertz time-domain spectroscopy (THz-TDS) provides non-contact measurement of the frequency dependent conductivity of thin films. Here, we expand the applicability of THz-TDS by spatially mapping the carrier density and mobility of epitaxial graphene grown on silicon carbide. The extracted values are compared to Hall measurements and agrees well for homogeneously conducting samples.",
keywords = "Epitaxial graphene, Metrology, Terahertz time-domain spectroscopy, Mobility, Hall measurement, 2D materials",
author = "Whelan, {Patrick Rebsdorf} and Xiaojing Zhao and Iwona Pasternak and Wlodek Strupinski and Jepsen, {Peter Uhd} and Peter B{\o}ggild",
year = "2019",
doi = "10.1016/j.mee.2019.03.022",
language = "English",
volume = "212",
pages = "9--12",
journal = "Microelectronic Engineering",
issn = "0167-9317",
publisher = "Elsevier",

}

Non-contact mobility measurements of graphene on silicon carbide. / Whelan, Patrick Rebsdorf; Zhao, Xiaojing; Pasternak, Iwona; Strupinski, Wlodek; Jepsen, Peter Uhd; Bøggild, Peter.

In: Microelectronic Engineering, Vol. 212, 2019, p. 9-12.

Research output: Contribution to journalJournal articleResearchpeer-review

TY - JOUR

T1 - Non-contact mobility measurements of graphene on silicon carbide

AU - Whelan, Patrick Rebsdorf

AU - Zhao, Xiaojing

AU - Pasternak, Iwona

AU - Strupinski, Wlodek

AU - Jepsen, Peter Uhd

AU - Bøggild, Peter

PY - 2019

Y1 - 2019

N2 - Non-invasive measurement techniques are of utmost importance for characterization of atomically thin materials to speed up the measurement process while avoiding mechanical damage or contamination of the fragile materials. Terahertz time-domain spectroscopy (THz-TDS) provides non-contact measurement of the frequency dependent conductivity of thin films. Here, we expand the applicability of THz-TDS by spatially mapping the carrier density and mobility of epitaxial graphene grown on silicon carbide. The extracted values are compared to Hall measurements and agrees well for homogeneously conducting samples.

AB - Non-invasive measurement techniques are of utmost importance for characterization of atomically thin materials to speed up the measurement process while avoiding mechanical damage or contamination of the fragile materials. Terahertz time-domain spectroscopy (THz-TDS) provides non-contact measurement of the frequency dependent conductivity of thin films. Here, we expand the applicability of THz-TDS by spatially mapping the carrier density and mobility of epitaxial graphene grown on silicon carbide. The extracted values are compared to Hall measurements and agrees well for homogeneously conducting samples.

KW - Epitaxial graphene

KW - Metrology

KW - Terahertz time-domain spectroscopy

KW - Mobility

KW - Hall measurement

KW - 2D materials

U2 - 10.1016/j.mee.2019.03.022

DO - 10.1016/j.mee.2019.03.022

M3 - Journal article

VL - 212

SP - 9

EP - 12

JO - Microelectronic Engineering

JF - Microelectronic Engineering

SN - 0167-9317

ER -