Non-contact mobility measurements of graphene on silicon carbide

Patrick Rebsdorf Whelan, Xiaojing Zhao, Iwona Pasternak, Wlodek Strupinski, Peter Uhd Jepsen, Peter Bøggild*

*Corresponding author for this work

Research output: Contribution to journalJournal articleResearchpeer-review

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Abstract

Non-invasive measurement techniques are of utmost importance for characterization of atomically thin materials to speed up the measurement process while avoiding mechanical damage or contamination of the fragile materials. Terahertz time-domain spectroscopy (THz-TDS) provides non-contact measurement of the frequency dependent conductivity of thin films. Here, we expand the applicability of THz-TDS by spatially mapping the carrier density and mobility of epitaxial graphene grown on silicon carbide. The extracted values are compared to Hall measurements and agrees well for homogeneously conducting samples.
Original languageEnglish
JournalMicroelectronic Engineering
Volume212
Pages (from-to)9-12
ISSN0167-9317
DOIs
Publication statusPublished - 2019

Keywords

  • Epitaxial graphene
  • Metrology
  • Terahertz time-domain spectroscopy
  • Mobility
  • Hall measurement
  • 2D materials

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