Noise and regeneration in semiconductor waveguides with saturable gain and absorption

Filip Öhman; S. Bischoff; Bjarne Tromborg; Jesper Mørk

doi:10.1109/JQE.2003.823035

Noise and regeneration in semiconductor waveguides with saturable gain and absorption

Filip Öhman
, S. Bischoff
, Bjarne Tromborg
, Jesper Mørk

Alight Technologies ApS

Research output: Contribution to journal › Journal article › Research › peer-review

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Abstract

We have modeled the noise properties of a novel waveguide device with regenerative properties. The device consists of alternating sections of saturable gain and absorption, which give a nonlinear power transfer function. We investigate the relative intensity noise spectra and signal-to-noise ratio after the device by both a small-signal analysis and large-signal simulation, and we show that the gain saturation gives noise redistribution at the mark level. We also examine the influence of the nonlinearity on the noise probability density function and show that the standard approximations of Gaussian and noncentral>tex/tex

Original language	English
Journal	I E E E Journal of Quantum Electronics
Volume	40
Issue number	3
Pages (from-to)	245-255
ISSN	0018-9197
DOIs	https://doi.org/10.1109/JQE.2003.823035
Publication status	Published - 2004

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Copyright: 2004 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE

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title = "Noise and regeneration in semiconductor waveguides with saturable gain and absorption",

abstract = "We have modeled the noise properties of a novel waveguide device with regenerative properties. The device consists of alternating sections of saturable gain and absorption, which give a nonlinear power transfer function. We investigate the relative intensity noise spectra and signal-to-noise ratio after the device by both a small-signal analysis and large-signal simulation, and we show that the gain saturation gives noise redistribution at the mark level. We also examine the influence of the nonlinearity on the noise probability density function and show that the standard approximations of Gaussian and noncentral>tex/tex",

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T1 - Noise and regeneration in semiconductor waveguides with saturable gain and absorption

AU - Öhman, Filip

AU - Bischoff, S.

AU - Tromborg, Bjarne

AU - Mørk, Jesper

N1 - Copyright: 2004 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE

PY - 2004

Y1 - 2004

N2 - We have modeled the noise properties of a novel waveguide device with regenerative properties. The device consists of alternating sections of saturable gain and absorption, which give a nonlinear power transfer function. We investigate the relative intensity noise spectra and signal-to-noise ratio after the device by both a small-signal analysis and large-signal simulation, and we show that the gain saturation gives noise redistribution at the mark level. We also examine the influence of the nonlinearity on the noise probability density function and show that the standard approximations of Gaussian and noncentral>tex/tex

AB - We have modeled the noise properties of a novel waveguide device with regenerative properties. The device consists of alternating sections of saturable gain and absorption, which give a nonlinear power transfer function. We investigate the relative intensity noise spectra and signal-to-noise ratio after the device by both a small-signal analysis and large-signal simulation, and we show that the gain saturation gives noise redistribution at the mark level. We also examine the influence of the nonlinearity on the noise probability density function and show that the standard approximations of Gaussian and noncentral>tex/tex

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DO - 10.1109/JQE.2003.823035

M3 - Journal article

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JO - I E E E Journal of Quantum Electronics

JF - I E E E Journal of Quantum Electronics

IS - 3

ER -

Noise and regeneration in semiconductor waveguides with saturable gain and absorption

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