Nitride-based interfacial layers for monolithic tandem integration of new solar energy materials on Si: The case of CZTS

Filipe Mesquita Alves Martinho, Alireza Hajijafarassar, Simón López Mariño, Moises Espindola Rodriguez, Sara Lena Josefin Engberg, Mungunshagai Gansukh, Fredrik Stulen, Sigbjørn Grini, Stela Canulescu, Eugen Stamate, Andrea Crovetto, Lasse Vines, Jørgen Schou, Ole Hansen

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Abstract

The monolithic tandem integration of third-generation solar energy materials on silicon holds great promise for photoelectrochemistry and photovoltaics. However, this can be challenging when it involves high-temperature reactive processes, which would risk damaging the Si bottom cell. One such case is the high-temperature sulfurization/selenization in thin film chalcogenide solar cells, of which the kesterite Cu2ZnSnS4 (CZTS) is an example. Here, by using very thin (<10 nm) TiN-based diffusion barriers at the interface, with different composition and properties, we demonstrate on a device level that the protection of the Si bottom cell is largely dependent on the barrier layer engineering. Several monolithic CZTS/Si tandem solar cells with open-circuit voltages (Voc) up to 1.06 V and efficiencies up to 3.9% are achieved, indicating a performance comparable to conventional interfacial layers based on transparent conductive oxides and pointing to a promising alternative design in solar energy conversion devices.
Original languageEnglish
JournalApplied Energy Materials
Volume3
Issue number5
Pages (from-to)4600–4609
ISSN2574-0962
DOIs
Publication statusPublished - 2020

Keywords

  • Tandem
  • Kesterite
  • TOPCon
  • Photovoltaics
  • TiN

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