NEW-TYPE OF CHARGED-PARTICLES DETECTOR BASED ON POINT CONTACTS FORMED IN A GAAS-ALGAAS HETEROSTRUCTURE BY SPLIT-GATES

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Abstract

We propose a new principle for a low temperature semiconductor detector of charged particles with possibly submicron lateral resolution based on point contacts formed in the 2-dimensional electron gas (2DEG) of a G4As-AlxGa1-xAs heterostructure using split-gates. The detector operates up to liquid nitrogen temperatures. Impinging particles excite locally extra donors in the doping layer of the heterostructure. By measuring simultaneous increase in the conductances of 3 point contacts due to the impacts of charged particles the position of penetration is calculated using the Thomas-Fermi approximation for screening in 2DEG.
Original languageEnglish
JournalJournal of Low Temperature Physics
Volume93
Issue number3-4
Pages (from-to)739-744
ISSN0022-2291
Publication statusPublished - 1993
Externally publishedYes
EventINTERNATIONAL WORKSHOP ON LOW TEMPERATURE DETECTORS - UNIV CALIF BERKELEY, BERKELEY
Duration: 1 Jan 1993 → …
Conference number: 5TH

Conference

ConferenceINTERNATIONAL WORKSHOP ON LOW TEMPERATURE DETECTORS
Number5TH
CityUNIV CALIF BERKELEY, BERKELEY
Period01/01/1993 → …

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