Abstract
We propose a new principle for a low temperature semiconductor detector of charged particles with possibly submicron lateral resolution based on point contacts formed in the 2-dimensional electron gas (2DEG) of a G4As-AlxGa1-xAs heterostructure using split-gates. The detector operates up to liquid nitrogen temperatures. Impinging particles excite locally extra donors in the doping layer of the heterostructure. By measuring simultaneous increase in the conductances of 3 point contacts due to the impacts of charged particles the position of penetration is calculated using the Thomas-Fermi approximation for screening in 2DEG.
| Original language | English |
|---|---|
| Journal | Journal of Low Temperature Physics |
| Volume | 93 |
| Issue number | 3-4 |
| Pages (from-to) | 739-744 |
| ISSN | 0022-2291 |
| Publication status | Published - 1993 |
| Externally published | Yes |
| Event | INTERNATIONAL WORKSHOP ON LOW TEMPERATURE DETECTORS - UNIV CALIF BERKELEY, BERKELEY Duration: 1 Jan 1993 → … Conference number: 5TH |
Conference
| Conference | INTERNATIONAL WORKSHOP ON LOW TEMPERATURE DETECTORS |
|---|---|
| Number | 5TH |
| City | UNIV CALIF BERKELEY, BERKELEY |
| Period | 01/01/1993 → … |