New Light on the Metal-Insulator Transition in VO2: A Terahertz Perspective

Peter Uhd Jepsen (Invited author), Bernd M. Fischer (Invited author), Andreas Thoman (Invited author), Hanspeter Helm (Invited author), J. Y. Suh (Invited author), Rene Lopez (Invited author), Richard Haglund Jr. (Invited author)

Research output: Chapter in Book/Report/Conference proceedingConference abstract in proceedingsResearch

Abstract

We investigate the metal-insulator (MI) transition in vanadium dioxide (VO2), thin films with Terahertz Time-Domains Spectroscopy (THz-TDS). The capability of detecting both amplitude and phase of the transmission characteristics as the phase of the transmitted THz signal switches at a markedly different temperature than the transmitted amplitude. A model based on a homogeneous increase of the carrier concentration across the transition temperature accounts for this difference. The sign of the observed phase shift sets strict limits to the concentration and mobility of carriers in the metallic phase of VO2.
Original languageEnglish
Title of host publicationInternational Workshop on Terahertz Technology (TeraTech'05) - Extended Abstracts
Publication date2005
Pages19-21
Publication statusPublished - 2005
EventInternational Workshop on Terahertz Technology - Osaka, Japan
Duration: 16 Nov 200518 Nov 2005
http://www.ile.osaka-u.ac.jp/research/THP/thz2005/

Workshop

WorkshopInternational Workshop on Terahertz Technology
CountryJapan
CityOsaka
Period16/11/200518/11/2005
Internet address

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