New Light on the Metal-Insulator Transition in VO2: A Terahertz Perspective

Peter Uhd Jepsen; Bernd M. Fischer; Andreas Thoman; Hanspeter Helm; J. Y. Suh; Rene Lopez; Richard Haglund Jr.

New Light on the Metal-Insulator Transition in VO₂: A Terahertz Perspective

Peter Uhd Jepsen (Invited author), Bernd M. Fischer (Invited author), Andreas Thoman (Invited author), Hanspeter Helm (Invited author), J. Y. Suh (Invited author), Rene Lopez (Invited author), Richard Haglund Jr. (Invited author)

Research output: Chapter in Book/Report/Conference proceeding › Conference abstract in proceedings › Research

Abstract

We investigate the metal-insulator (MI) transition in vanadium dioxide (VO2), thin films with Terahertz Time-Domains Spectroscopy (THz-TDS). The capability of detecting both amplitude and phase of the transmission characteristics as the phase of the transmitted THz signal switches at a markedly different temperature than the transmitted amplitude. A model based on a homogeneous increase of the carrier concentration across the transition temperature accounts for this difference. The sign of the observed phase shift sets strict limits to the concentration and mobility of carriers in the metallic phase of VO2.

Original language	English
Title of host publication	International Workshop on Terahertz Technology (TeraTech'05) - Extended Abstracts
Publication date	2005
Pages	19-21
Publication status	Published - 2005
Event	International Workshop on Terahertz Technology - Osaka, Japan Duration: 16 Nov 2005 → 18 Nov 2005 http://www.ile.osaka-u.ac.jp/research/THP/thz2005/

Workshop

Workshop	International Workshop on Terahertz Technology
Country/Territory	Japan
City	Osaka
Period	16/11/2005 → 18/11/2005
Internet address	http://www.ile.osaka-u.ac.jp/research/THP/thz2005/

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Cite this

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title = "New Light on the Metal-Insulator Transition in VO2: A Terahertz Perspective",

abstract = "We investigate the metal-insulator (MI) transition in vanadium dioxide (VO2), thin films with Terahertz Time-Domains Spectroscopy (THz-TDS). The capability of detecting both amplitude and phase of the transmission characteristics as the phase of the transmitted THz signal switches at a markedly different temperature than the transmitted amplitude. A model based on a homogeneous increase of the carrier concentration across the transition temperature accounts for this difference. The sign of the observed phase shift sets strict limits to the concentration and mobility of carriers in the metallic phase of VO2.",

author = "Jepsen, {Peter Uhd} and Fischer, {Bernd M.} and Andreas Thoman and Hanspeter Helm and Suh, {J. Y.} and Rene Lopez and {Haglund Jr.}, Richard",

year = "2005",

language = "English",

pages = "19--21",

booktitle = "International Workshop on Terahertz Technology (TeraTech'05) - Extended Abstracts",

note = "International Workshop on Terahertz Technology, TeraTech'05 ; Conference date: 16-11-2005 Through 18-11-2005",

url = "http://www.ile.osaka-u.ac.jp/research/THP/thz2005/",

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New Light on the Metal-Insulator Transition in VO₂: A Terahertz Perspective. / Jepsen, Peter Uhd (Invited author); Fischer, Bernd M. (Invited author); Thoman, Andreas (Invited author) et al.
International Workshop on Terahertz Technology (TeraTech'05) - Extended Abstracts. 2005. p. 19-21.

Research output: Chapter in Book/Report/Conference proceeding › Conference abstract in proceedings › Research

TY - ABST

T1 - New Light on the Metal-Insulator Transition in VO2: A Terahertz Perspective

AU - Jepsen, Peter Uhd

AU - Fischer, Bernd M.

AU - Thoman, Andreas

AU - Helm, Hanspeter

AU - Suh, J. Y.

AU - Lopez, Rene

AU - Haglund Jr., Richard

PY - 2005

Y1 - 2005

N2 - We investigate the metal-insulator (MI) transition in vanadium dioxide (VO2), thin films with Terahertz Time-Domains Spectroscopy (THz-TDS). The capability of detecting both amplitude and phase of the transmission characteristics as the phase of the transmitted THz signal switches at a markedly different temperature than the transmitted amplitude. A model based on a homogeneous increase of the carrier concentration across the transition temperature accounts for this difference. The sign of the observed phase shift sets strict limits to the concentration and mobility of carriers in the metallic phase of VO2.

AB - We investigate the metal-insulator (MI) transition in vanadium dioxide (VO2), thin films with Terahertz Time-Domains Spectroscopy (THz-TDS). The capability of detecting both amplitude and phase of the transmission characteristics as the phase of the transmitted THz signal switches at a markedly different temperature than the transmitted amplitude. A model based on a homogeneous increase of the carrier concentration across the transition temperature accounts for this difference. The sign of the observed phase shift sets strict limits to the concentration and mobility of carriers in the metallic phase of VO2.

M3 - Conference abstract in proceedings

SP - 19

EP - 21

BT - International Workshop on Terahertz Technology (TeraTech'05) - Extended Abstracts

T2 - International Workshop on Terahertz Technology

Y2 - 16 November 2005 through 18 November 2005