New Insights into the Origins of Sb-Induced Effects on Self-Catalyzed GaAsSb Nanowire Arrays

Dingding Ren, Dasa L. Dheeraj, Chengjun Jin, Julie S. Nilsen, Junghwan Huh, Johannes F. Reinertsen, A. Mazid Munshi, Anders Gustafsson, Antonius T. J. van Helvoort, Helge Weman, Bjorn-Ove Fimland

Research output: Contribution to journalJournal articleResearchpeer-review

Abstract

Tertiary semiconductor nanowire arrays enable scalable fabrication of nano-optoelectronic devices with tunable bandgap. However, the lack of insight into the effects of the incorporation of Vy element results in lack of control on the growth of ternary III-V1-yVy nanowires and hinders the development of high-performance nanowire devices based on such ternaries. Here, we report on the origins of Sb-induced effects affecting the morphology and crystal structure of self-catalyzed GaAsSb nanowire arrays. The, nanowire growth by molecular beam epitaxy is changed both kinetically and thermodynamically by the introduction of Sb. An anomalous decrease of the axial growth rate with increased Sb2 flux is found to be due to both the indirect kinetic influence via the Ga adatom diffusion induced catalyst geometry evolution and the direct composition modulation. From the fundamental growth analyses and the crystal phase evolution mechanism proposed in this Letter, the phase transition/stability in catalyst-assisted ternary III-V-V nanowire growth can be well explained. Wavelength tunability with good homogeneity of the optical emission from the self-catalyzed GaAsSb nanowire arrays with high crystal phase purity is demonstrated by only adjusting the Sb2 flux.
Original languageEnglish
JournalNano letters
Volume16
Issue number2
Pages (from-to)1201-1209
Number of pages9
ISSN1530-6984
DOIs
Publication statusPublished - 2016

Keywords

  • Bandgap tuning
  • Chemical potential
  • Crystal phase engineering
  • GaAsSb
  • Molecular beam epitaxy
  • Nanowires

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