Abstract
Observations of 14 neutron-induced single event upsets (SEUs) in static memory devices (SRAMs) at commercial aircraft flight altitudes are described. The observed SEU rate at a 10 km flight altitude based on an exposure of 160 standard 256 kb CMOS SRAMs is 4.8*10/sup -8/ upsets/b/day. In the laboratory, 117 SRAMs of two different brands were irradiated with fast neutrons from a Pu-Be source. A total of 176 SEUs have been observed, including two SEU pairs. The upset rates from the laboratory tests are compared to those found in the airborne SRAMs
| Original language | English |
|---|---|
| Journal | I E E E Transactions on Nuclear Science |
| Volume | 40 |
| Issue number | 2 |
| Pages (from-to) | 74-77 |
| ISSN | 0018-9499 |
| DOIs | |
| Publication status | Published - 1993 |
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