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Neutron-induced single event upsets in static RAMS observed at 10 KM flight altitude

  • J. Olsen
  • , P.E. Becher
  • , P.B. Fynbo
  • , P. Raaby
  • , J. Schultz

    Research output: Contribution to journalJournal articleResearchpeer-review

    Abstract

    Observations of 14 neutron-induced single event upsets (SEUs) in static memory devices (SRAMs) at commercial aircraft flight altitudes are described. The observed SEU rate at a 10 km flight altitude based on an exposure of 160 standard 256 kb CMOS SRAMs is 4.8*10/sup -8/ upsets/b/day. In the laboratory, 117 SRAMs of two different brands were irradiated with fast neutrons from a Pu-Be source. A total of 176 SEUs have been observed, including two SEU pairs. The upset rates from the laboratory tests are compared to those found in the airborne SRAMs
    Original languageEnglish
    JournalI E E E Transactions on Nuclear Science
    Volume40
    Issue number2
    Pages (from-to)74-77
    ISSN0018-9499
    DOIs
    Publication statusPublished - 1993

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