Negative permittivity of ZnO thin films prepared from aluminum and gallium doped ceramics via pulsed-laser deposition

M. A. Bodea, G. Sbarcea, G. V. Naik, Alexandra Boltasseva, T. A. Klar, J. D. Pedarnig

Research output: Contribution to journalJournal articleResearchpeer-review

Abstract

Aluminum and gallium doped zinc oxide thin films with negative dielectric permittivity in the near infrared spectral range are grown by pulsed laser deposition. Composite ceramics comprising ZnO and secondary phase Al2O3 or Ga2O3 are employed as targets for laser ablation. Films deposited on glass from dense and small-grained ceramic targets show optical transmission larger than 70 % in the visible and reveal an onset of metallic reflectivity in the near infrared at 1100 nm and a crossover to a negative real part of the permittivity at approximately 1500 nm. In comparison to noble metals, doped ZnO shows substantially smaller losses in the near infrared.
Original languageEnglish
JournalApplied Physics A: Materials Science & Processing
Volume110
Issue number4
Pages (from-to)929-934
ISSN0947-8396
DOIs
Publication statusPublished - 2013

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