TY - JOUR
T1 - Near-critical Stranski-Krastanov growth of InAs/InP quantum dots
AU - Berdnikov, Yury
AU - Holewa, Paweł
AU - Kadkhodazadeh, Shima
AU - Śmigiel, Jan Mikołaj
AU - Sakanas, Aurimas
AU - Frackowiak, Adrianna
AU - Yvind, Kresten
AU - Syperek, Marcin
AU - Semenova, Elizaveta
N1 - Publisher Copyright:
© The Author(s) 2024.
PY - 2024
Y1 - 2024
N2 - This work shows how to control the surface density and size of InAs/InP quantum dots over a wide range by tailoring the conditions of Stranski-Krastanov growth. We demonstrate that in the near-critical growth regime, the density of quantum dots can be tuned between 107 and 1010 cm-2. Furthermore, employing both experimental and modeling approaches, we show that the size (and therefore the emission wavelength) of InAs nanoislands on InP can be controlled independently from their surface density. Finally, we demonstrate that our growth method gives low-density ensembles with well-isolated QD-originated emission lines in the telecom C-band.
AB - This work shows how to control the surface density and size of InAs/InP quantum dots over a wide range by tailoring the conditions of Stranski-Krastanov growth. We demonstrate that in the near-critical growth regime, the density of quantum dots can be tuned between 107 and 1010 cm-2. Furthermore, employing both experimental and modeling approaches, we show that the size (and therefore the emission wavelength) of InAs nanoislands on InP can be controlled independently from their surface density. Finally, we demonstrate that our growth method gives low-density ensembles with well-isolated QD-originated emission lines in the telecom C-band.
U2 - 10.1038/s41598-024-70451-1
DO - 10.1038/s41598-024-70451-1
M3 - Journal article
C2 - 39390005
AN - SCOPUS:85206034428
SN - 2045-2322
VL - 14
JO - Scientific Reports
JF - Scientific Reports
IS - 1
M1 - 23697
ER -