Nanowires of GaAs and InAs grown by molecular beam epitaxy

E. Johnson, M. Aagesen, C.B. Sørensen, J. Nygård, P.E. Lindelof

Research output: Chapter in Book/Report/Conference proceeding › Conference abstract in proceedings › Research

Original language	English
Title of host publication	Proceedings (CD-ROM)
Number of pages	1168
Place of Publication	Sapporo
Publisher	Japanese Society of Microscopy
Publication date	2006
Publication status	Published - 2006
Event	16th International Microscopy Congress (ICM16) - Sapporo, Japan Duration: 3 Sept 2006 → 8 Sept 2006 Conference number: 16

Conference	16th International Microscopy Congress (ICM16)
Number	16
Country/Territory	Japan
City	Sapporo
Period	03/09/2006 → 08/09/2006

OpenUrl availability

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title = "Nanowires of GaAs and InAs grown by molecular beam epitaxy",

keywords = "Energiteknologier p{\aa} vej",

author = "E. Johnson and M. Aagesen and C.B. S{\o}rensen and J. Nyg{\aa}rd and P.E. Lindelof",

year = "2006",

language = "English",

booktitle = "Proceedings (CD-ROM)",

publisher = "Japanese Society of Microscopy",

address = "Japan",

note = "16th International Microscopy Congress (ICM16), ICM16 ; Conference date: 03-09-2006 Through 08-09-2006",

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TY - ABST

T1 - Nanowires of GaAs and InAs grown by molecular beam epitaxy

AU - Johnson, E.

AU - Aagesen, M.

AU - Sørensen, C.B.

AU - Nygård, J.

AU - Lindelof, P.E.

N1 - Conference code: 16

PY - 2006

Y1 - 2006

KW - Energiteknologier på vej

M3 - Conference abstract in proceedings

BT - Proceedings (CD-ROM)

PB - Japanese Society of Microscopy

CY - Sapporo

T2 - 16th International Microscopy Congress (ICM16)

Y2 - 3 September 2006 through 8 September 2006

ER -