Nanotextured Si surfaces derived from block-copolymer self-assembly with superhydrophobic, superhydrophilic, or superamphiphobic properties

Agnieszka Telecka*, Tao Li, Sokol Ndoni, Rafael J. Taboryski

*Corresponding author for this work

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We demonstrate the use of wafer-scale nanolithography based on block-copolymer (BCP) self-assembly for the fabrication of surfaces with enhanced wetting properties. All classes of wetting behaviour derived from the same BCP nanolithography step are demonstrated. An in situ etch mask is defined by self-assembly of polystyrene (PS) and dimethylsiloxane (PDMS) domains to form a predominantly hexagonal array with pitch size (72 +/- 3) nm. The subsequent branched processing scheme, exclusively employing dry chemistry and reactive ion etching (RIE), allows the fabrication of nanoholes, nanopillars, or high aspect ratio nano-hoodoo features (overhang profile structures) with a diameter below 100 nm. The surfaces are finally functionalized with either hydrophobic surface chemistry by self-assembly from the precursor perfluorodecyltrichlorosilane (FDTS), or hydrophilic surface chemistry obtained by oxygen plasma treatment. The different texture and surface chemistry configurations are characterized with respect to their wetting properties with water, alkanes and organic oils. While, both nano-pillar and nano-hole surfaces feature excellent superhydrophobic properties with water contact angles (WCAs) exceeding 170 degrees and roll-off angles below 5 degrees, only the nano-pillar surfaces exhibit convincing superhydrophilicity with WCAs below 5 degrees. The repellency of low surface tension liquids known as amphiphobicity is demonstrated for the nano-hoodoo surfaces.
Original languageEnglish
JournalR S C Advances
Issue number8
Pages (from-to)4204-4213
Publication statusPublished - 2018

Bibliographical note

© The Royal Society of Chemistry 2018. Open Access Article. Published on 22 January 2018. This article is licensed under a Creative Commons Attribution-NonCommercial 3.0 Unported Licence.

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