Nanoscale Structuring by Misfit Dislocations in Si1-xGex/Si Epitaxial Systems

S.Y. Shiryaev; Flemming Jensen; J. Lundsgaard Hansen; Jon Wulff Petersen; Arne Nylandsted Larsen

doi:10.1103/PhysRevLett.78.503

Nanoscale Structuring by Misfit Dislocations in Si1-xGex/Si Epitaxial Systems

S.Y. Shiryaev, Flemming Jensen, J. Lundsgaard Hansen, Jon Wulff Petersen, Arne Nylandsted Larsen

Aarhus University

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Abstract

New capabilities of misfit dislocations for spatial manipulation of islands in Si1-xGex/Si heteroepitaxial systems have been elucidated. Formation of highly ordered Ge-island patterns on substrates prestructured by slip bands of misfit dislocations is revealed. The major sources leading to the ordering are identified to be dislocation strain fields at the surface and modifications of the nearsurface-layer morphology induced by dislocation slip.

Original language	English
Journal	Physical Review Letters
Volume	78
Issue number	3
Pages (from-to)	503-506
ISSN	0031-9007
DOIs	https://doi.org/10.1103/PhysRevLett.78.503
Publication status	Published - 1997

Bibliographical note

Copyright (1997) American Physical Society.

Keywords

RELAXATION
GE
SI
RIPPLES
GROWTH
LAYERS
FILMS
MECHANISMS

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http://link.aps.org/doi/10.1103/PhysRevLett.78.503

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title = "Nanoscale Structuring by Misfit Dislocations in Si1-xGex/Si Epitaxial Systems",

abstract = "New capabilities of misfit dislocations for spatial manipulation of islands in Si1-xGex/Si heteroepitaxial systems have been elucidated. Formation of highly ordered Ge-island patterns on substrates prestructured by slip bands of misfit dislocations is revealed. The major sources leading to the ordering are identified to be dislocation strain fields at the surface and modifications of the nearsurface-layer morphology induced by dislocation slip.",

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AU - Shiryaev, S.Y.

AU - Jensen, Flemming

AU - Hansen, J. Lundsgaard

AU - Petersen, Jon Wulff

AU - Larsen, Arne Nylandsted

N1 - Copyright (1997) American Physical Society.

PY - 1997

Y1 - 1997

N2 - New capabilities of misfit dislocations for spatial manipulation of islands in Si1-xGex/Si heteroepitaxial systems have been elucidated. Formation of highly ordered Ge-island patterns on substrates prestructured by slip bands of misfit dislocations is revealed. The major sources leading to the ordering are identified to be dislocation strain fields at the surface and modifications of the nearsurface-layer morphology induced by dislocation slip.

AB - New capabilities of misfit dislocations for spatial manipulation of islands in Si1-xGex/Si heteroepitaxial systems have been elucidated. Formation of highly ordered Ge-island patterns on substrates prestructured by slip bands of misfit dislocations is revealed. The major sources leading to the ordering are identified to be dislocation strain fields at the surface and modifications of the nearsurface-layer morphology induced by dislocation slip.

KW - RELAXATION

KW - GE

KW - SI

KW - RIPPLES

KW - GROWTH

KW - LAYERS

KW - FILMS

KW - MECHANISMS

U2 - 10.1103/PhysRevLett.78.503

DO - 10.1103/PhysRevLett.78.503

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JO - Physical Review Letters

JF - Physical Review Letters

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ER -

Nanoscale Structuring by Misfit Dislocations in Si1-xGex/Si Epitaxial Systems

Abstract

Bibliographical note

Keywords

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