Nanoscale Structuring by Misfit Dislocations in Si1-xGex/Si Epitaxial Systems

S.Y. Shiryaev, Flemming Jensen, J. Lundsgaard Hansen, Jon Wulff Petersen, Arne Nylandsted Larsen

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    Abstract

    New capabilities of misfit dislocations for spatial manipulation of islands in Si1-xGex/Si heteroepitaxial systems have been elucidated. Formation of highly ordered Ge-island patterns on substrates prestructured by slip bands of misfit dislocations is revealed. The major sources leading to the ordering are identified to be dislocation strain fields at the surface and modifications of the nearsurface-layer morphology induced by dislocation slip.
    Original languageEnglish
    JournalPhysical Review Letters
    Volume78
    Issue number3
    Pages (from-to)503-506
    ISSN0031-9007
    DOIs
    Publication statusPublished - 1997

    Bibliographical note

    Copyright (1997) American Physical Society.

    Keywords

    • RELAXATION
    • GE
    • SI
    • RIPPLES
    • GROWTH
    • LAYERS
    • FILMS
    • MECHANISMS

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