Nanoscale interaction layer at the interface between Al films and SiO2 substrates of Al/AlOx/Al Josephson tunnel junctions

L.J. Zeng, Tine Greibe, S. Nik, C.M. Wilson, P. Delsing, E. Olsson

Research output: Contribution to journalJournal articleResearchpeer-review

Abstract

An interaction layer is found at the Al/SiO2 interface in Al/AlOx/Al tunnel junctions grown on SiO2 substrates. The amorphous intermixing layer has an average thickness of about 5 nm. We present the detailed structure of this interfacial layer as determined by transmission electron microscopy. The layer contains alumina with aluminum being octahedrally coordinated according to electron energy loss spectroscopy analysis rather than tetrahedrally coordinated, where the latter coordination is the most common type in amorphous alumina. Depth profiles of the Al-O and Si-O bonding characteristics were also investigated using energy loss near edge structure. (C) 2013 AIP Publishing LLC [http://dx.doi.org.globalproxy.cvt.dk/10.1063/1.4801798]
Original languageEnglish
Article number143905
JournalJournal of Applied Physics
Volume113
Issue number14
Number of pages4
ISSN0021-8979
DOIs
Publication statusPublished - 2013
Externally publishedYes

Cite this