Nanoscale interaction layer at the interface between Al films and SiO2 substrates of Al/AlOx/Al Josephson tunnel junctions

L.J. Zeng; Tine Greibe; S. Nik; C.M. Wilson; P. Delsing; E. Olsson

doi:10.1063/1.4801798

Nanoscale interaction layer at the interface between Al films and SiO₂ substrates of Al/AlO_x/Al Josephson tunnel junctions

L.J. Zeng, Tine Greibe, S. Nik, C.M. Wilson, P. Delsing, E. Olsson

Chalmers University of Technology

Research output: Contribution to journal › Journal article › Research › peer-review

Abstract

An interaction layer is found at the Al/SiO2 interface in Al/AlOx/Al tunnel junctions grown on SiO2 substrates. The amorphous intermixing layer has an average thickness of about 5 nm. We present the detailed structure of this interfacial layer as determined by transmission electron microscopy. The layer contains alumina with aluminum being octahedrally coordinated according to electron energy loss spectroscopy analysis rather than tetrahedrally coordinated, where the latter coordination is the most common type in amorphous alumina. Depth profiles of the Al-O and Si-O bonding characteristics were also investigated using energy loss near edge structure. (C) 2013 AIP Publishing LLC [http://dx.doi.org.globalproxy.cvt.dk/10.1063/1.4801798]

Original language	English
Article number	143905
Journal	Journal of Applied Physics
Volume	113
Issue number	14
Number of pages	4
ISSN	0021-8979
DOIs	https://doi.org/10.1063/1.4801798
Publication status	Published - 2013
Externally published	Yes

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title = "Nanoscale interaction layer at the interface between Al films and SiO2 substrates of Al/AlOx/Al Josephson tunnel junctions",

abstract = "An interaction layer is found at the Al/SiO2 interface in Al/AlOx/Al tunnel junctions grown on SiO2 substrates. The amorphous intermixing layer has an average thickness of about 5 nm. We present the detailed structure of this interfacial layer as determined by transmission electron microscopy. The layer contains alumina with aluminum being octahedrally coordinated according to electron energy loss spectroscopy analysis rather than tetrahedrally coordinated, where the latter coordination is the most common type in amorphous alumina. Depth profiles of the Al-O and Si-O bonding characteristics were also investigated using energy loss near edge structure. (C) 2013 AIP Publishing LLC [http://dx.doi.org.globalproxy.cvt.dk/10.1063/1.4801798] ",

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AU - Zeng, L.J.

AU - Greibe, Tine

AU - Nik, S.

AU - Wilson, C.M.

AU - Delsing, P.

AU - Olsson, E.

PY - 2013

Y1 - 2013

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AB - An interaction layer is found at the Al/SiO2 interface in Al/AlOx/Al tunnel junctions grown on SiO2 substrates. The amorphous intermixing layer has an average thickness of about 5 nm. We present the detailed structure of this interfacial layer as determined by transmission electron microscopy. The layer contains alumina with aluminum being octahedrally coordinated according to electron energy loss spectroscopy analysis rather than tetrahedrally coordinated, where the latter coordination is the most common type in amorphous alumina. Depth profiles of the Al-O and Si-O bonding characteristics were also investigated using energy loss near edge structure. (C) 2013 AIP Publishing LLC [http://dx.doi.org.globalproxy.cvt.dk/10.1063/1.4801798]

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