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Nano-selective area growth of InGaAs/InP using CBr4 insitu etching

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    Abstract

    We are investigating the conditions for nano-patterned selective area epitaxial growth using e-beam lithography on HSQ resist and in-situ etching in the MOVPE reactor.
    Original languageEnglish
    Title of host publicationAdvanced Photonics Congress
    Number of pages3
    PublisherOptical Society of America
    Publication date2012
    PagesJTu5A.12
    Publication statusPublished - 2012
    EventIntegrated Photonics Research, Silicon and Nanophotonics (IPR) - Colorado Springs, CO, United States
    Duration: 17 Jun 201220 Jun 2012
    http://www.osa.org/meetings/topical_meetings/ipr/

    Conference

    ConferenceIntegrated Photonics Research, Silicon and Nanophotonics (IPR)
    Country/TerritoryUnited States
    CityColorado Springs, CO
    Period17/06/201220/06/2012
    Internet address

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