Nano-engineered high-confinement AlGaAs waveguide devices for nonlinear photonics

Minhao Pu (Invited author), Yi Zheng (Invited author), Erik Stassen (Invited author), Ayman Nasar Kamel (Invited author), Pierre-Yves Bony (Invited author), Luisa Ottaviano (Invited author), Elizaveta Semenova (Invited author), Kresten Yvind (Invited author)

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Abstract

The combination of nonlinear and integrated photonics enables applications in telecommunication, metrology, spectroscopy, and quantum information science. Pioneer works in silicon-on-insulator (SOI) has shown huge potentials of integrated nonlinear photonics. However, silicon suffers two-photon absorption (TPA) in the telecom wavelengths around 1550 nm, which hampers its practical applications. To get a superior nonlinear performance, an ideal integrated waveguide platform should combine a high material nonlinearity, low material absorption (linear and nonlinear), a strong light confinement, and a mature fabrication technology. Aluminum gallium arsenide (AlGaAs) was identified as a promising candidate for nonlinear applications since 1994. It offers a large transparency window, a high refractive index (n approximate to 3.3), a nonlinear index (n2) on the order of 10(-17) m(2)W(-1), and the ability to engineer the material bandgap to mitigate TPA. In spite of the high intrinsic nonlinearity, conventional deep-etched AlGaAs waveguides exhibit low effective nonlinearity due to the vertical low-index contrast. To take full advantage of the high intrinsic linear and nonlinear index of AlGaAs material, we reconstructed the conventional AlGaAs waveguide into a high index contrast layout that has been realized in the AlGaAs-on-insulator (AlGaAsOI) platform. We have demonstrated low loss waveguides with an ultra-high nonlinear coefficient and high Q microresonators in such a platform. Owing to the high confinement waveguide layout and state-of-the-art nanolithography techniques, the dispersion properties of the AlGaAsOI waveguide can be tailored efficiently and accurately by altering the waveguide shape or dimension, which enables various applications in signal processing and generation, which will be reviewed in this paper.
Original languageEnglish
Title of host publicationProceedings of SPIE
Volume10672
PublisherSPIE - International Society for Optical Engineering
Publication date2018
Pages106721R-106721R-7
ISBN (Print)9781510618718
DOIs
Publication statusPublished - 2018
EventSPIE Photonics Europe 2018 - Palais de la Musique et des Congrès, Strasbourg, France
Duration: 22 Apr 201826 Apr 2018

Conference

ConferenceSPIE Photonics Europe 2018
LocationPalais de la Musique et des Congrès
CountryFrance
CityStrasbourg
Period22/04/201826/04/2018
SeriesProceedings of S P I E - International Society for Optical Engineering
ISSN0277-786X

Keywords

  • Integrated optics
  • Nonlinear optics
  • Nonlinear materials
  • Parametric processes
  • Optical signal processing
  • Optical communication
  • Frequency comb
  • Supercontinuum generation

Cite this

Pu, M., Zheng, Y., Stassen, E., Kamel, A. N., Bony, P-Y., Ottaviano, L., ... Yvind, K. (2018). Nano-engineered high-confinement AlGaAs waveguide devices for nonlinear photonics. In Proceedings of SPIE (Vol. 10672, pp. 106721R-106721R-7). SPIE - International Society for Optical Engineering. Proceedings of S P I E - International Society for Optical Engineering https://doi.org/10.1117/12.2307114
Pu, Minhao ; Zheng, Yi ; Stassen, Erik ; Kamel, Ayman Nasar ; Bony, Pierre-Yves ; Ottaviano, Luisa ; Semenova, Elizaveta ; Yvind, Kresten. / Nano-engineered high-confinement AlGaAs waveguide devices for nonlinear photonics. Proceedings of SPIE. Vol. 10672 SPIE - International Society for Optical Engineering, 2018. pp. 106721R-106721R-7 (Proceedings of S P I E - International Society for Optical Engineering).
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abstract = "The combination of nonlinear and integrated photonics enables applications in telecommunication, metrology, spectroscopy, and quantum information science. Pioneer works in silicon-on-insulator (SOI) has shown huge potentials of integrated nonlinear photonics. However, silicon suffers two-photon absorption (TPA) in the telecom wavelengths around 1550 nm, which hampers its practical applications. To get a superior nonlinear performance, an ideal integrated waveguide platform should combine a high material nonlinearity, low material absorption (linear and nonlinear), a strong light confinement, and a mature fabrication technology. Aluminum gallium arsenide (AlGaAs) was identified as a promising candidate for nonlinear applications since 1994. It offers a large transparency window, a high refractive index (n approximate to 3.3), a nonlinear index (n2) on the order of 10(-17) m(2)W(-1), and the ability to engineer the material bandgap to mitigate TPA. In spite of the high intrinsic nonlinearity, conventional deep-etched AlGaAs waveguides exhibit low effective nonlinearity due to the vertical low-index contrast. To take full advantage of the high intrinsic linear and nonlinear index of AlGaAs material, we reconstructed the conventional AlGaAs waveguide into a high index contrast layout that has been realized in the AlGaAs-on-insulator (AlGaAsOI) platform. We have demonstrated low loss waveguides with an ultra-high nonlinear coefficient and high Q microresonators in such a platform. Owing to the high confinement waveguide layout and state-of-the-art nanolithography techniques, the dispersion properties of the AlGaAsOI waveguide can be tailored efficiently and accurately by altering the waveguide shape or dimension, which enables various applications in signal processing and generation, which will be reviewed in this paper.",
keywords = "Integrated optics, Nonlinear optics, Nonlinear materials, Parametric processes, Optical signal processing, Optical communication, Frequency comb, Supercontinuum generation",
author = "Minhao Pu and Yi Zheng and Erik Stassen and Kamel, {Ayman Nasar} and Pierre-Yves Bony and Luisa Ottaviano and Elizaveta Semenova and Kresten Yvind",
year = "2018",
doi = "10.1117/12.2307114",
language = "English",
isbn = "9781510618718",
volume = "10672",
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publisher = "SPIE - International Society for Optical Engineering",
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Pu, M, Zheng, Y, Stassen, E, Kamel, AN, Bony, P-Y, Ottaviano, L, Semenova, E & Yvind, K 2018, Nano-engineered high-confinement AlGaAs waveguide devices for nonlinear photonics. in Proceedings of SPIE. vol. 10672, SPIE - International Society for Optical Engineering, Proceedings of S P I E - International Society for Optical Engineering, pp. 106721R-106721R-7, SPIE Photonics Europe 2018, Strasbourg, France, 22/04/2018. https://doi.org/10.1117/12.2307114

Nano-engineered high-confinement AlGaAs waveguide devices for nonlinear photonics. / Pu, Minhao (Invited author); Zheng, Yi (Invited author); Stassen, Erik (Invited author); Kamel, Ayman Nasar (Invited author); Bony, Pierre-Yves (Invited author); Ottaviano, Luisa (Invited author); Semenova, Elizaveta (Invited author); Yvind, Kresten (Invited author).

Proceedings of SPIE. Vol. 10672 SPIE - International Society for Optical Engineering, 2018. p. 106721R-106721R-7 (Proceedings of S P I E - International Society for Optical Engineering).

Research output: Chapter in Book/Report/Conference proceedingArticle in proceedingsResearchpeer-review

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AU - Pu, Minhao

AU - Zheng, Yi

AU - Stassen, Erik

AU - Kamel, Ayman Nasar

AU - Bony, Pierre-Yves

AU - Ottaviano, Luisa

AU - Semenova, Elizaveta

AU - Yvind, Kresten

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N2 - The combination of nonlinear and integrated photonics enables applications in telecommunication, metrology, spectroscopy, and quantum information science. Pioneer works in silicon-on-insulator (SOI) has shown huge potentials of integrated nonlinear photonics. However, silicon suffers two-photon absorption (TPA) in the telecom wavelengths around 1550 nm, which hampers its practical applications. To get a superior nonlinear performance, an ideal integrated waveguide platform should combine a high material nonlinearity, low material absorption (linear and nonlinear), a strong light confinement, and a mature fabrication technology. Aluminum gallium arsenide (AlGaAs) was identified as a promising candidate for nonlinear applications since 1994. It offers a large transparency window, a high refractive index (n approximate to 3.3), a nonlinear index (n2) on the order of 10(-17) m(2)W(-1), and the ability to engineer the material bandgap to mitigate TPA. In spite of the high intrinsic nonlinearity, conventional deep-etched AlGaAs waveguides exhibit low effective nonlinearity due to the vertical low-index contrast. To take full advantage of the high intrinsic linear and nonlinear index of AlGaAs material, we reconstructed the conventional AlGaAs waveguide into a high index contrast layout that has been realized in the AlGaAs-on-insulator (AlGaAsOI) platform. We have demonstrated low loss waveguides with an ultra-high nonlinear coefficient and high Q microresonators in such a platform. Owing to the high confinement waveguide layout and state-of-the-art nanolithography techniques, the dispersion properties of the AlGaAsOI waveguide can be tailored efficiently and accurately by altering the waveguide shape or dimension, which enables various applications in signal processing and generation, which will be reviewed in this paper.

AB - The combination of nonlinear and integrated photonics enables applications in telecommunication, metrology, spectroscopy, and quantum information science. Pioneer works in silicon-on-insulator (SOI) has shown huge potentials of integrated nonlinear photonics. However, silicon suffers two-photon absorption (TPA) in the telecom wavelengths around 1550 nm, which hampers its practical applications. To get a superior nonlinear performance, an ideal integrated waveguide platform should combine a high material nonlinearity, low material absorption (linear and nonlinear), a strong light confinement, and a mature fabrication technology. Aluminum gallium arsenide (AlGaAs) was identified as a promising candidate for nonlinear applications since 1994. It offers a large transparency window, a high refractive index (n approximate to 3.3), a nonlinear index (n2) on the order of 10(-17) m(2)W(-1), and the ability to engineer the material bandgap to mitigate TPA. In spite of the high intrinsic nonlinearity, conventional deep-etched AlGaAs waveguides exhibit low effective nonlinearity due to the vertical low-index contrast. To take full advantage of the high intrinsic linear and nonlinear index of AlGaAs material, we reconstructed the conventional AlGaAs waveguide into a high index contrast layout that has been realized in the AlGaAs-on-insulator (AlGaAsOI) platform. We have demonstrated low loss waveguides with an ultra-high nonlinear coefficient and high Q microresonators in such a platform. Owing to the high confinement waveguide layout and state-of-the-art nanolithography techniques, the dispersion properties of the AlGaAsOI waveguide can be tailored efficiently and accurately by altering the waveguide shape or dimension, which enables various applications in signal processing and generation, which will be reviewed in this paper.

KW - Integrated optics

KW - Nonlinear optics

KW - Nonlinear materials

KW - Parametric processes

KW - Optical signal processing

KW - Optical communication

KW - Frequency comb

KW - Supercontinuum generation

U2 - 10.1117/12.2307114

DO - 10.1117/12.2307114

M3 - Article in proceedings

SN - 9781510618718

VL - 10672

T3 - Proceedings of S P I E - International Society for Optical Engineering

SP - 106721R-106721R-7

BT - Proceedings of SPIE

PB - SPIE - International Society for Optical Engineering

ER -

Pu M, Zheng Y, Stassen E, Kamel AN, Bony P-Y, Ottaviano L et al. Nano-engineered high-confinement AlGaAs waveguide devices for nonlinear photonics. In Proceedings of SPIE. Vol. 10672. SPIE - International Society for Optical Engineering. 2018. p. 106721R-106721R-7. (Proceedings of S P I E - International Society for Optical Engineering). https://doi.org/10.1117/12.2307114