Multivariate data analysis of process control data from neutron transmutation doping of silicon

K. Heydorn, N. Hegaard

    Research output: Contribution to journalConference articleResearchpeer-review

    Abstract

    Final resistivities obtained by neutron transmutation doping (NTD) of silicon can be measured only after an annealing process has been carried out at the manufacturer's plant. The reactor centre carrying out the neutron doping process by irradiation under selected conditions must control the process by indirect measurement of the product quality. The method of partial least squares was used to identify important parameters for improving the quality of the NTD-silicon, as well as for predicting the final quality data observed by the customer.
    Original languageEnglish
    JournalChemometrics and Intelligent Laboratory Systems
    Volume23
    Issue number1
    Pages (from-to)191-196
    ISSN0169-7439
    DOIs
    Publication statusPublished - 1994
    Event3rd Scandinavian symposium on chemometrics (SSC3) - Århus, Denmark
    Duration: 13 Jun 199317 Jun 1993
    Conference number: 3

    Conference

    Conference3rd Scandinavian symposium on chemometrics (SSC3)
    Number3
    CountryDenmark
    CityÅrhus
    Period13/06/199317/06/1993

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