Abstract
Final resistivities obtained by neutron transmutation doping (NTD) of silicon can be measured only after an annealing process has been carried out at the manufacturer's plant. The reactor centre carrying out the neutron doping process by irradiation under selected conditions must control the process by indirect measurement of the product quality. The method of partial least squares was used to identify important parameters for improving the quality of the NTD-silicon, as well as for predicting the final quality data observed by the customer.
Original language | English |
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Journal | Chemometrics and Intelligent Laboratory Systems |
Volume | 23 |
Issue number | 1 |
Pages (from-to) | 191-196 |
ISSN | 0169-7439 |
DOIs | |
Publication status | Published - 1994 |
Event | 3rd Scandinavian Symposium on Chemometrics - Århus, Denmark Duration: 13 Jun 1993 → 17 Jun 1993 Conference number: 3 |
Conference
Conference | 3rd Scandinavian Symposium on Chemometrics |
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Number | 3 |
Country/Territory | Denmark |
City | Århus |
Period | 13/06/1993 → 17/06/1993 |