Final resistivities obtained by neutron transmutation doping (NTD) of silicon can be measured only after an annealing process has been carried out at the manufacturer's plant. The reactor centre carrying out the neutron doping process by irradiation under selected conditions must control the process by indirect measurement of the product quality. The method of partial least squares was used to identify important parameters for improving the quality of the NTD-silicon, as well as for predicting the final quality data observed by the customer.
|Journal||Chemometrics and Intelligent Laboratory Systems|
|Publication status||Published - 1994|
|Event||3rd Scandinavian symposium on chemometrics (SSC3) - Århus, Denmark|
Duration: 13 Jun 1993 → 17 Jun 1993
Conference number: 3
|Conference||3rd Scandinavian symposium on chemometrics (SSC3)|
|Period||13/06/1993 → 17/06/1993|