Multiplication values were measured in the collector junctions of silicon p-n-p and n-p-n transistors before and after bombardment by 1016 neutrons/cm2. Within experimental error there was no change either in junction fields, as deduced from capacitance measurements, or in multiplication values in any of the transistors. The implication is that the electron and hole ionization rates did not change as a result of the addition of extra scattering centers. This result is in direct contradiction to observations of Lee et al. The most likely explanation for the discrepancy is erroneous determination of junction field by Lee et al.