We investigate capture of carriers from states in the continuous part of the energy spectrum into the discrete states of self-assembled InAs/GaAs QDs via emission of one or two phonons. We are not aware of any other investigations of two-phonon mediated capture processes in QDs, but we show that this may be an efficient capture mechanism. The phonons are assumed to be bulk GaAs LO phonons with zero dispersion. The QD was modelled by a finite confinement potential well in the effective-mass approximation.
|Title of host publication||Summaries of Papers Presented at the Technical Digest Quantum Electronics and Laser Science Conference|
|Publication status||Published - 2001|
|Event||2001 Quantum Electronics and Laser Science Conference - Baltimore, MD, United States|
Duration: 6 May 2001 → 10 May 2001
|Conference||2001 Quantum Electronics and Laser Science Conference|
|Period||06/05/2001 → 10/05/2001|