TY - JOUR
T1 - Monolithically Integrated BiVO4/Si Tandem Devices Enabling Unbiased Photoelectrochemical Water Splitting
AU - Jung, Gihun
AU - Moon, Choongman
AU - Martinho, Filipe
AU - Jung, Yonghoon
AU - Chu, Jinwoo
AU - Park, Hyewon
AU - Hajijafarassar, Alireza
AU - Nielsen, Rasmus
AU - Schou, Jørgen
AU - Park, Jeongyoung
AU - Vesborg, Peter Christian Kjærgaard
AU - Hansen, Ole
AU - Lee, Yunseog
AU - Canulescu, Stela
AU - Shin, Byungha
PY - 2023
Y1 - 2023
N2 - A photoelectrochemical (PEC) water splitting device based on a dual-junction monolithic tandem cell that utilizes NiOOH/FeOOH/BiVO4/SnO2/Ta:SnO2 (TTO)/tunnel oxide passivated contact (TOPCon) Si is reported. The PEC device achieves a maximum photocurrent density of 1.4 mA cm−2 (equal to a solar-to-hydrogen conversion efficiency of 1.72%) in 1.0 m potassium borate solution (pH 9) when illuminated with air mass 1.5 G simulated solar irradiation, which is the highest value among dual-junction monolithic photoelectrochemical cells except for III–V materials. The TOPCon Si not only works as an appropriate bottom photoelectrode for subsequent high-temperature BiVO4 processing but also offers a high photovoltage of 590 mV. Transparent and conductive TTO grown by pulsed laser deposition serves as a recombination layer to achieve effective integration. In addition, the TTO provides chemical and physical protection, allowing the surface of the TOPCon Si to exhibit 24 h of tandem cell stability under weak base electrolyte conditions. The SnO2 hole-blocking layer inserted between TTO and BiVO4 enhances the charge separation of BiVO4, allowing the device to achieve high efficiency. Artificial leaf-type monolithic tandem cells consisting of NiFe/BiVO4/SnO2/TTO/TOPCon Si/Ag/Ti/Pt with a solar-to-hydrogen efficiency of 0.44% are also demonstrated.
AB - A photoelectrochemical (PEC) water splitting device based on a dual-junction monolithic tandem cell that utilizes NiOOH/FeOOH/BiVO4/SnO2/Ta:SnO2 (TTO)/tunnel oxide passivated contact (TOPCon) Si is reported. The PEC device achieves a maximum photocurrent density of 1.4 mA cm−2 (equal to a solar-to-hydrogen conversion efficiency of 1.72%) in 1.0 m potassium borate solution (pH 9) when illuminated with air mass 1.5 G simulated solar irradiation, which is the highest value among dual-junction monolithic photoelectrochemical cells except for III–V materials. The TOPCon Si not only works as an appropriate bottom photoelectrode for subsequent high-temperature BiVO4 processing but also offers a high photovoltage of 590 mV. Transparent and conductive TTO grown by pulsed laser deposition serves as a recombination layer to achieve effective integration. In addition, the TTO provides chemical and physical protection, allowing the surface of the TOPCon Si to exhibit 24 h of tandem cell stability under weak base electrolyte conditions. The SnO2 hole-blocking layer inserted between TTO and BiVO4 enhances the charge separation of BiVO4, allowing the device to achieve high efficiency. Artificial leaf-type monolithic tandem cells consisting of NiFe/BiVO4/SnO2/TTO/TOPCon Si/Ag/Ti/Pt with a solar-to-hydrogen efficiency of 0.44% are also demonstrated.
KW - Photoelectrochemical water splitting
KW - Monolithic integration
KW - Wireless tandem
KW - Unassisted water splitting
U2 - 10.1002/aenm.202301235
DO - 10.1002/aenm.202301235
M3 - Journal article
SN - 1614-6832
VL - 13
JO - Advanced Energy Materials
JF - Advanced Energy Materials
IS - 15
M1 - 2301235
ER -
