Molecular beam epitaxy of CuMnAs

Filip Krizek; Zdeněk Kašpar; Aliaksei Vetushka; Dominik Kriegner; Elisabetta M. Fiordaliso; Jan Michalicka; Ondřej Man; Jan Zubáč; Martin Brajer; Victoria A. Hills; Kevin W. Edmonds; Peter Wadley; Richard P. Campion; Kamil Olejník; Tomáš Jungwirth; Vít Novák

doi:10.1103/PhysRevMaterials.4.014409

Molecular beam epitaxy of CuMnAs

Filip Krizek^*, Zdeněk Kašpar, Aliaksei Vetushka, Dominik Kriegner, Elisabetta M. Fiordaliso, Jan Michalicka, Ondřej Man, Jan Zubáč, Martin Brajer, Victoria A. Hills, Kevin W. Edmonds, Peter Wadley, Richard P. Campion, Kamil Olejník, Tomáš Jungwirth, Vít Novák

^*Corresponding author for this work

Research output: Contribution to journal › Journal article › Research › peer-review

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Abstract

We present a detailed study of the growth of the tetragonal polymorph of antiferromagnetic CuMnAs by the molecular beam epitaxy technique. We explore the parameter space of growth conditions and their effect on the microstructural and transport properties of the material. We identify its typical structural defects and compare the properties of epitaxial CuMnAs layers grown on GaP, GaAs, and Si substrates. Finally, we investigate the correlation between the crystalline quality of CuMnAs and its performance in terms of electrically induced resistance switching.

Original language	English
Article number	014409
Journal	Physical Review Materials
Volume	4
Issue number	1
Number of pages	9
ISSN	2475-9953
DOIs	https://doi.org/10.1103/PhysRevMaterials.4.014409
Publication status	Published - 2020

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@article{c92a095b7f29434797ee493426e8d7ef,

title = "Molecular beam epitaxy of CuMnAs",

abstract = "We present a detailed study of the growth of the tetragonal polymorph of antiferromagnetic CuMnAs by the molecular beam epitaxy technique. We explore the parameter space of growth conditions and their effect on the microstructural and transport properties of the material. We identify its typical structural defects and compare the properties of epitaxial CuMnAs layers grown on GaP, GaAs, and Si substrates. Finally, we investigate the correlation between the crystalline quality of CuMnAs and its performance in terms of electrically induced resistance switching.",

author = "Filip Krizek and Zden{\v e}k Ka{\v s}par and Aliaksei Vetushka and Dominik Kriegner and Fiordaliso, {Elisabetta M.} and Jan Michalicka and Ond{\v r}ej Man and Jan Zub{\'a}{\v c} and Martin Brajer and Hills, {Victoria A.} and Edmonds, {Kevin W.} and Peter Wadley and Campion, {Richard P.} and Kamil Olejn{\'i}k and Tom{\'a}{\v s} Jungwirth and V{\'i}t Nov{\'a}k",

year = "2020",

doi = "10.1103/PhysRevMaterials.4.014409",

language = "English",

volume = "4",

journal = "Physical Review Materials",

issn = "2476-0455",

publisher = "American Physical Society",

number = "1",

}

TY - JOUR

T1 - Molecular beam epitaxy of CuMnAs

AU - Krizek, Filip

AU - Kašpar, Zdeněk

AU - Vetushka, Aliaksei

AU - Kriegner, Dominik

AU - Fiordaliso, Elisabetta M.

AU - Michalicka, Jan

AU - Man, Ondřej

AU - Zubáč, Jan

AU - Brajer, Martin

AU - Hills, Victoria A.

AU - Edmonds, Kevin W.

AU - Wadley, Peter

AU - Campion, Richard P.

AU - Olejník, Kamil

AU - Jungwirth, Tomáš

AU - Novák, Vít

PY - 2020

Y1 - 2020

N2 - We present a detailed study of the growth of the tetragonal polymorph of antiferromagnetic CuMnAs by the molecular beam epitaxy technique. We explore the parameter space of growth conditions and their effect on the microstructural and transport properties of the material. We identify its typical structural defects and compare the properties of epitaxial CuMnAs layers grown on GaP, GaAs, and Si substrates. Finally, we investigate the correlation between the crystalline quality of CuMnAs and its performance in terms of electrically induced resistance switching.

AB - We present a detailed study of the growth of the tetragonal polymorph of antiferromagnetic CuMnAs by the molecular beam epitaxy technique. We explore the parameter space of growth conditions and their effect on the microstructural and transport properties of the material. We identify its typical structural defects and compare the properties of epitaxial CuMnAs layers grown on GaP, GaAs, and Si substrates. Finally, we investigate the correlation between the crystalline quality of CuMnAs and its performance in terms of electrically induced resistance switching.

U2 - 10.1103/PhysRevMaterials.4.014409

DO - 10.1103/PhysRevMaterials.4.014409

M3 - Journal article

SN - 2476-0455

VL - 4

JO - Physical Review Materials

JF - Physical Review Materials

IS - 1

M1 - 014409

ER -

Molecular beam epitaxy of CuMnAs

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