Molecular beam epitaxy growth for InSb1-xBix thin films on (100) GaAs substrates is reported. Successful Bi incorporation for 2% is achieved, and up to 70% of the incorporated Bi atoms are at substitutional sites. The effects of growth parameters on Bi incorporation and surface morphology are studied. Strong In and Ga inter-diffusion induced by Bi incorporation is observed and discussed.
|Journal||Journal of Crystal Growth|
|Publication status||Published - 2013|
- Molecular beam epitaxy
- Bismuth compounds
- Semiconducting III–V materials
- Semiconducting ternary compounds