Molecular beam epitaxy growth of InSb1-xBix thin films

null Yuxin Song; null Shumin Wang; Ivy Saha Roy; Peixiong Shi; Anders Hallen; Zonghe  Lai

Molecular beam epitaxy growth of InSb_1-xBi_x thin films

Yuxin Song, Shumin Wang, Ivy Saha Roy, Peixiong Shi, Anders Hallen, Zonghe Lai

Research output: Contribution to journal › Journal article › Research › peer-review

Abstract

Molecular beam epitaxy growth for InSb_1-xBi_xthin films on (100) GaAs substrates is reported. Successful Bi incorporation for 2% is achieved, and up to 70% of the incorporated Bi atoms are at substitutional sites. The effects of growth parameters on Bi incorporation and surface morphology are studied. Strong In and Ga inter-diffusion induced by Bi incorporation is observed and discussed.

Original language	English
Journal	Journal of Crystal Growth
Volume	378
Pages (from-to)	323-328
ISSN	0022-0248
Publication status	Published - 2013

Keywords

Molecular beam epitaxy
Bismuth compounds
Semiconducting III–V materials
Semiconducting ternary compounds

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Cite this

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title = "Molecular beam epitaxy growth of InSb1-xBix thin films",

abstract = "Molecular beam epitaxy growth for InSb1-xBix thin films on (100) GaAs substrates is reported. Successful Bi incorporation for 2% is achieved, and up to 70% of the incorporated Bi atoms are at substitutional sites. The effects of growth parameters on Bi incorporation and surface morphology are studied. Strong In and Ga inter-diffusion induced by Bi incorporation is observed and discussed.",

keywords = "Molecular beam epitaxy, Bismuth compounds, Semiconducting III–V materials, Semiconducting ternary compounds",

author = "{Yuxin Song} and {Shumin Wang} and {Saha Roy}, Ivy and Peixiong Shi and Anders Hallen and Zonghe Lai",

year = "2013",

language = "English",

volume = "378",

pages = "323--328",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier",

}

TY - JOUR

T1 - Molecular beam epitaxy growth of InSb1-xBix thin films

AU - Yuxin Song, null

AU - Shumin Wang, null

AU - Saha Roy, Ivy

AU - Shi, Peixiong

AU - Hallen, Anders

AU - Lai, Zonghe

PY - 2013

Y1 - 2013

N2 - Molecular beam epitaxy growth for InSb1-xBix thin films on (100) GaAs substrates is reported. Successful Bi incorporation for 2% is achieved, and up to 70% of the incorporated Bi atoms are at substitutional sites. The effects of growth parameters on Bi incorporation and surface morphology are studied. Strong In and Ga inter-diffusion induced by Bi incorporation is observed and discussed.

AB - Molecular beam epitaxy growth for InSb1-xBix thin films on (100) GaAs substrates is reported. Successful Bi incorporation for 2% is achieved, and up to 70% of the incorporated Bi atoms are at substitutional sites. The effects of growth parameters on Bi incorporation and surface morphology are studied. Strong In and Ga inter-diffusion induced by Bi incorporation is observed and discussed.

KW - Molecular beam epitaxy

KW - Bismuth compounds

KW - Semiconducting III–V materials

KW - Semiconducting ternary compounds

M3 - Journal article

SN - 0022-0248

VL - 378

SP - 323

EP - 328

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

ER -