Molecular beam epitaxy growth of InSb1−xBix thin films

Yuxin Song; Shumin Wang; Ivy Saha Roy; Peixiong Shi; Anders Hallen; Zonghe Lai

doi:10.1016/j.jcrysgro.2012.12.085

Molecular beam epitaxy growth of InSb1−xBix thin films

Yuxin Song
, Shumin Wang
, Ivy Saha Roy
, Peixiong Shi
, Anders Hallen
, Zonghe Lai

Chalmers University of Technology
KTH Royal Institute of Technology

Research output: Contribution to journal › Journal article › Research › peer-review

Abstract

Molecular beam epitaxy growth for InSb1−xBix thin films on (100) GaAs substrates is reported. Successful Bi incorporation for 2% is achieved, and up to 70% of the incorporated Bi atoms are at substitutional sites. The effects of growth parameters on Bi incorporation and surface morphology are studied. Strong In and Ga inter-diffusion induced by Bi incorporation is observed and discussed.

Original language	English
Journal	Journal of Crystal Growth
Volume	378
Pages (from-to)	323-328
ISSN	0022-0248
DOIs	https://doi.org/10.1016/j.jcrysgro.2012.12.085
Publication status	Published - 2013

Keywords

A3. Molecular beam epitaxy
B1. Bismuth compounds
B2. Semiconducting III–V materials
B2. Semiconducting ternary compounds

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10.1016/j.jcrysgro.2012.12.085

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title = "Molecular beam epitaxy growth of InSb1−xBix thin films",

abstract = "Molecular beam epitaxy growth for InSb1−xBix thin films on (100) GaAs substrates is reported. Successful Bi incorporation for 2\% is achieved, and up to 70\% of the incorporated Bi atoms are at substitutional sites. The effects of growth parameters on Bi incorporation and surface morphology are studied. Strong In and Ga inter-diffusion induced by Bi incorporation is observed and discussed.",

keywords = "A3. Molecular beam epitaxy, B1. Bismuth compounds, B2. Semiconducting III{\textendash}V materials, B2. Semiconducting ternary compounds",

author = "Yuxin Song and Shumin Wang and \{Saha Roy\}, Ivy and Peixiong Shi and Anders Hallen and Zonghe Lai",

year = "2013",

doi = "10.1016/j.jcrysgro.2012.12.085",

language = "English",

volume = "378",

pages = "323--328",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier",

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TY - JOUR

T1 - Molecular beam epitaxy growth of InSb1−xBix thin films

AU - Song, Yuxin

AU - Wang, Shumin

AU - Saha Roy, Ivy

AU - Shi, Peixiong

AU - Hallen, Anders

AU - Lai, Zonghe

PY - 2013

Y1 - 2013

N2 - Molecular beam epitaxy growth for InSb1−xBix thin films on (100) GaAs substrates is reported. Successful Bi incorporation for 2% is achieved, and up to 70% of the incorporated Bi atoms are at substitutional sites. The effects of growth parameters on Bi incorporation and surface morphology are studied. Strong In and Ga inter-diffusion induced by Bi incorporation is observed and discussed.

AB - Molecular beam epitaxy growth for InSb1−xBix thin films on (100) GaAs substrates is reported. Successful Bi incorporation for 2% is achieved, and up to 70% of the incorporated Bi atoms are at substitutional sites. The effects of growth parameters on Bi incorporation and surface morphology are studied. Strong In and Ga inter-diffusion induced by Bi incorporation is observed and discussed.

KW - A3. Molecular beam epitaxy

KW - B1. Bismuth compounds

KW - B2. Semiconducting III–V materials

KW - B2. Semiconducting ternary compounds

U2 - 10.1016/j.jcrysgro.2012.12.085

DO - 10.1016/j.jcrysgro.2012.12.085

M3 - Journal article

SN - 0022-0248

VL - 378

SP - 323

EP - 328

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

ER -

Molecular beam epitaxy growth of InSb1−xBix thin films

Abstract

Keywords

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