Molecular beam epitaxy growth for InSb1−xBix thin films on (100) GaAs substrates is reported. Successful Bi incorporation for 2% is achieved, and up to 70% of the incorporated Bi atoms are at substitutional sites. The effects of growth parameters on Bi incorporation and surface morphology are studied. Strong In and Ga inter-diffusion induced by Bi incorporation is observed and discussed.
- A3. Molecular beam epitaxy
- B1. Bismuth compounds
- B2. Semiconducting III–V materials
- B2. Semiconducting ternary compounds
Song, Y., Wang, S., Saha Roy, I., Shi, P., Hallen, A., & Lai, Z. (2013). Molecular beam epitaxy growth of InSb1−xBix thin films. Journal of Crystal Growth, 378, 323-328. https://doi.org/10.1016/j.jcrysgro.2012.12.085