Molecular beam epitaxy growth of InSb1−xBix thin films

Yuxin Song, Shumin Wang, Ivy Saha Roy, Peixiong Shi, Anders Hallen, Zonghe Lai

    Research output: Contribution to journalJournal articleResearchpeer-review


    Molecular beam epitaxy growth for InSb1−xBix thin films on (100) GaAs substrates is reported. Successful Bi incorporation for 2% is achieved, and up to 70% of the incorporated Bi atoms are at substitutional sites. The effects of growth parameters on Bi incorporation and surface morphology are studied. Strong In and Ga inter-diffusion induced by Bi incorporation is observed and discussed.
    Original languageEnglish
    JournalJournal of Crystal Growth
    Pages (from-to)323-328
    Publication statusPublished - 2013


    • A3. Molecular beam epitaxy
    • B1. Bismuth compounds
    • B2. Semiconducting III–V materials
    • B2. Semiconducting ternary compounds

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