Module Integrated GaN Power Stage for High Switching Frequency Operation

Yasser Nour, Arnold Knott

Research output: Chapter in Book/Report/Conference proceedingArticle in proceedingsResearchpeer-review

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Abstract

An increased attention has been detected todevelop smaller and lighter high voltage power converters in therange of 50 V to 400 V domains. The applications for theseconverters are mainly focused for Power over Ethernet (PoE),LED lighting and ac adapters. Design for high power density isone of the targets for next generation power converters. Thispaper presents an 80 V input capable multi-chip moduleintegration of enhancement mode gallium nitride (GaN) fieldeffect transistors (FETs) based power stage. The module design ispresented and validated through experimental results. The powerstage is integrated on a high glass transition temperature 0.4 mmthick FR4 substrate configured as a 70 pin ball grid arraypackage. The power stage is tested up to switching frequency of12 MHz. The power stage achieved 88.5 % peak efficiency whenconfigured as a soft switching buck converter operating at 7MHz. The converter is tested up to 12 W of output power at 13 V± 1.5 V output voltage. The converter achieved a volume powerdensity of 20 W/cm3 and area power density of 9.4 W/cm2.
Original languageEnglish
Title of host publicationProceedings of the 12th IEEE International Conference on Power Electronics and Drive Systems (PEDS 2017)
PublisherIEEE
Publication date2017
Pages848-852
ISBN (Electronic)978-1-5090-2364-6
DOIs
Publication statusPublished - 2017
Event12th IEEE International Conference on Power Electronics and Drive Systems (PEDS 2017) - Honolulu, United States
Duration: 12 Dec 201715 Dec 2017

Conference

Conference12th IEEE International Conference on Power Electronics and Drive Systems (PEDS 2017)
Country/TerritoryUnited States
CityHonolulu
Period12/12/201715/12/2017

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