Abstract
We have observed a large enhancement of the electric-field-induced optical absorption arising from hot-electron effects in n-type GaAs at 77 K. The magnitude and field dependence of the enhancement can be approximately accounted for by a theory attributing the effect to broadening of the final states of the optical transitions by interaction with the nonequilibrium optical phonons produced by the hot electrons.
Original language | English |
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Journal | Physical Review B |
Volume | 8 |
Issue number | 12 |
Pages (from-to) | 5592-5596 |
ISSN | 2469-9950 |
DOIs | |
Publication status | Published - 1973 |