Modification of the Absorption Edge of GaAs Arising from Hot-Electron Effects

J. C. McGroddy, Ove Christensen

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Abstract

We have observed a large enhancement of the electric-field-induced optical absorption arising from hot-electron effects in n-type GaAs at 77 K. The magnitude and field dependence of the enhancement can be approximately accounted for by a theory attributing the effect to broadening of the final states of the optical transitions by interaction with the nonequilibrium optical phonons produced by the hot electrons.
Original languageEnglish
JournalPhysical Review B
Volume8
Issue number12
Pages (from-to)5592-5596
ISSN2469-9950
DOIs
Publication statusPublished - 1973

Bibliographical note

Copyright (1973) by the American Physical Society.

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