Modelling CMOS radiation tolerance in the high-dose range

Research output: Chapter in Book/Report/Conference proceeding › Article in proceedings › Research

Original language	English
Title of host publication	RADECS'95
Editors	G. Sarrabayrouse, M. Labrunee, R. Ecoffet
Place of Publication	Piscataway, NJ
Publisher	IEEE
Publication date	1997
Pages	183-190
ISBN (Print)	0-7803-3093-5
Publication status	Published - 1997
Event	3. European conference on radiation and its effects on components and systems - Arcachon, France Duration: 18 Sept 1995 → 22 Sept 1995

Conference	3. European conference on radiation and its effects on components and systems
Country/Territory	France
City	Arcachon
Period	18/09/1995 → 22/09/1995

OpenUrl availability

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title = "Modelling CMOS radiation tolerance in the high-dose range",

keywords = "Systemanalyse",

author = "A. Holmes-Siedle and P. Christensen and L. Adams and C.-C. Seifert",

year = "1997",

language = "English",

isbn = "0-7803-3093-5",

pages = "183--190",

editor = "G. Sarrabayrouse and M. Labrunee and R. Ecoffet",

booktitle = "RADECS'95",

publisher = "IEEE",

address = "United States",

note = "3. European conference on radiation and its effects on components and systems ; Conference date: 18-09-1995 Through 22-09-1995",

}

TY - GEN

T1 - Modelling CMOS radiation tolerance in the high-dose range

AU - Holmes-Siedle, A.

AU - Christensen, P.

AU - Adams, L.

AU - Seifert, C.-C.

PY - 1997

Y1 - 1997

KW - Systemanalyse

M3 - Article in proceedings

SN - 0-7803-3093-5

SP - 183

EP - 190

BT - RADECS'95

A2 - Sarrabayrouse, G.

A2 - Labrunee, M.

A2 - Ecoffet, R.

PB - IEEE

CY - Piscataway, NJ

T2 - 3. European conference on radiation and its effects on components and systems

Y2 - 18 September 1995 through 22 September 1995

ER -