Modeling of Schottky Barrier Diode Millimeter-Wave Multipliers at Cryogenic Temperatures

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We report on the evaluation of Schottky barrier diode GaAs multipliers at cryogenic temperatures. A GaAs Schottky barrier diode model is developed for theoretical estimation of doubler performance. The model is used to predict efficiency of doublers from room to cryogenic temperatures. The theoretical estimation is verified experimentally using a 78 GHz doubler cooled down to 14 K. The observed efficiency improvement due to cooling is approximately 4 % per 100 degrees.
Original languageEnglish
Title of host publicationProceedings. 2015 SBMO/IEEE MTT-S International Microwave and Optoelectronics Conference (IMOC)
Number of pages4
PublisherIEEE
Publication date2015
ISBN (Print)978-1-5090-0431-7
DOIs
Publication statusPublished - 2015
Event2015 SBMO/IEEE MTT-S International Microwave and Optoelectronics Conference (IMOC) - Porto de Galinhas, Brazil
Duration: 3 Nov 20156 Nov 2015
http://www.imoc2015.com/

Conference

Conference2015 SBMO/IEEE MTT-S International Microwave and Optoelectronics Conference (IMOC)
CountryBrazil
CityPorto de Galinhas
Period03/11/201506/11/2015
Internet address
CitationsWeb of Science® Times Cited: No match on DOI

    Research areas

  • Cryogenic temperature, Frequency multiplier, GaAs diodes, Millimeter wave, Varactor

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