Modeling of Schottky Barrier Diode Millimeter-Wave 
Multipliers at Cryogenic Temperatures

Tom K. Johansen; Oleksandr Rybalko; Vitaliy Zhurbenko; Sean Bowen; Jeffrey Hesler; Jan Henrik Ardenkjær-Larsen

doi:10.1109/IMOC.2015.7369088

Modeling of Schottky Barrier Diode Millimeter-Wave Multipliers at Cryogenic Temperatures

Tom K. Johansen, Oleksandr Rybalko, Vitaliy Zhurbenko, Sean Bowen, Jeffrey Hesler, Jan Henrik Ardenkjær-Larsen

Virginia Diodes, Inc.

Research output: Chapter in Book/Report/Conference proceeding › Article in proceedings › Research › peer-review

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Abstract

We report on the evaluation of Schottky barrier diode GaAs multipliers at cryogenic temperatures. A GaAs Schottky barrier diode model is developed for theoretical estimation of doubler performance. The model is used to predict efficiency of doublers from room to cryogenic temperatures. The theoretical estimation is verified experimentally using a 78 GHz doubler cooled down to 14 K. The observed efficiency improvement due to cooling is approximately 4 % per 100 degrees.

Original language	English
Title of host publication	Proceedings. 2015 SBMO/IEEE MTT-S International Microwave and Optoelectronics Conference (IMOC)
Number of pages	4
Publisher	IEEE
Publication date	2015
ISBN (Print)	978-1-5090-0431-7
DOIs	https://doi.org/10.1109/IMOC.2015.7369088
Publication status	Published - 2015
Event	2015 SBMO/IEEE MTT-S International Microwave and Optoelectronics Conference - Porto de Galinhas, Brazil Duration: 3 Nov 2015 → 6 Nov 2015 https://ieeexplore.ieee.org/xpl/conhome/7363713/proceeding

Conference

Conference	2015 SBMO/IEEE MTT-S International Microwave and Optoelectronics Conference
Country/Territory	Brazil
City	Porto de Galinhas
Period	03/11/2015 → 06/11/2015
Internet address	https://ieeexplore.ieee.org/xpl/conhome/7363713/proceeding

Keywords

Cryogenic temperature
Frequency multiplier
GaAs diodes
Millimeter wave
Varactor

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10.1109/IMOC.2015.7369088

Modeling of Schottky Barrier Diode Millimeter WaveAccepted author manuscript, 348 KB

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Cite this

@inproceedings{f2cb262ed91b4299b9d25eb4babea290,

title = "Modeling of Schottky Barrier Diode Millimeter-Wave Multipliers at Cryogenic Temperatures",

abstract = "We report on the evaluation of Schottky barrier diode GaAs multipliers at cryogenic temperatures. A GaAs Schottky barrier diode model is developed for theoretical estimation of doubler performance. The model is used to predict efficiency of doublers from room to cryogenic temperatures. The theoretical estimation is verified experimentally using a 78 GHz doubler cooled down to 14 K. The observed efficiency improvement due to cooling is approximately 4 % per 100 degrees. ",

keywords = "Cryogenic temperature, Frequency multiplier, GaAs diodes, Millimeter wave, Varactor",

author = "Johansen, {Tom K.} and Oleksandr Rybalko and Vitaliy Zhurbenko and Sean Bowen and Jeffrey Hesler and Ardenkj{\ae}r-Larsen, {Jan Henrik}",

year = "2015",

doi = "10.1109/IMOC.2015.7369088",

language = "English",

isbn = "978-1-5090-0431-7",

booktitle = "Proceedings. 2015 SBMO/IEEE MTT-S International Microwave and Optoelectronics Conference (IMOC)",

publisher = "IEEE",

address = "United States",

note = "2015 SBMO/IEEE MTT-S International Microwave and Optoelectronics Conference, IMOC 2015 ; Conference date: 03-11-2015 Through 06-11-2015",

url = "https://ieeexplore.ieee.org/xpl/conhome/7363713/proceeding",

}

Johansen, TK, Rybalko, O, Zhurbenko, V, Bowen, S, Hesler, J & Ardenkjær-Larsen, JH 2015, Modeling of Schottky Barrier Diode Millimeter-Wave Multipliers at Cryogenic Temperatures. in Proceedings. 2015 SBMO/IEEE MTT-S International Microwave and Optoelectronics Conference (IMOC). IEEE, 2015 SBMO/IEEE MTT-S International Microwave and Optoelectronics Conference, Porto de Galinhas, Brazil, 03/11/2015. https://doi.org/10.1109/IMOC.2015.7369088

Modeling of Schottky Barrier Diode Millimeter-Wave Multipliers at Cryogenic Temperatures. / Johansen, Tom K.; Rybalko, Oleksandr; Zhurbenko, Vitaliy et al.
Proceedings. 2015 SBMO/IEEE MTT-S International Microwave and Optoelectronics Conference (IMOC). IEEE, 2015.

Research output: Chapter in Book/Report/Conference proceeding › Article in proceedings › Research › peer-review

TY - GEN

T1 - Modeling of Schottky Barrier Diode Millimeter-Wave Multipliers at Cryogenic Temperatures

AU - Johansen, Tom K.

AU - Rybalko, Oleksandr

AU - Zhurbenko, Vitaliy

AU - Bowen, Sean

AU - Hesler, Jeffrey

AU - Ardenkjær-Larsen, Jan Henrik

PY - 2015

Y1 - 2015

N2 - We report on the evaluation of Schottky barrier diode GaAs multipliers at cryogenic temperatures. A GaAs Schottky barrier diode model is developed for theoretical estimation of doubler performance. The model is used to predict efficiency of doublers from room to cryogenic temperatures. The theoretical estimation is verified experimentally using a 78 GHz doubler cooled down to 14 K. The observed efficiency improvement due to cooling is approximately 4 % per 100 degrees.

AB - We report on the evaluation of Schottky barrier diode GaAs multipliers at cryogenic temperatures. A GaAs Schottky barrier diode model is developed for theoretical estimation of doubler performance. The model is used to predict efficiency of doublers from room to cryogenic temperatures. The theoretical estimation is verified experimentally using a 78 GHz doubler cooled down to 14 K. The observed efficiency improvement due to cooling is approximately 4 % per 100 degrees.

KW - Cryogenic temperature

KW - Frequency multiplier

KW - GaAs diodes

KW - Millimeter wave

KW - Varactor

U2 - 10.1109/IMOC.2015.7369088

DO - 10.1109/IMOC.2015.7369088

M3 - Article in proceedings

SN - 978-1-5090-0431-7

BT - Proceedings. 2015 SBMO/IEEE MTT-S International Microwave and Optoelectronics Conference (IMOC)

PB - IEEE

T2 - 2015 SBMO/IEEE MTT-S International Microwave and Optoelectronics Conference

Y2 - 3 November 2015 through 6 November 2015

ER -