Abstract
In this paper, the modeling of InP heterojunction bipolar transistors (HBTs) in transferred substrate (TS) technology is investigated. At first, a direct parameter extraction methodology dedicated to III-V based HBTs is employed to determine the small-signal equivalent circuit parameters from measured S-parameters. It is shown that the model prediction of measured S-parameters can be improved in the millimeter-wave frequency range by augmenting the small-signal model with a description of AC current crowding. The extracted elements of the small-signal model structure are employed as a starting point for the extraction of a large-signal model. The developed largesignal model for the TS-HBTs accurately predicts the DC over temperature and small-signal performance over bias as well as
the large-signal performance at millimeter-wave frequencies (77 GHz).
the large-signal performance at millimeter-wave frequencies (77 GHz).
| Original language | English |
|---|---|
| Title of host publication | Proceedings of the 8th European Microwave Integrated Circuits Conference |
| Publisher | IEEE |
| Publication date | 2013 |
| Pages | 280-283 |
| ISBN (Print) | 978-2-87487-032-3 |
| Publication status | Published - 2013 |
| Event | 8th European Microwave Integrated Circuit Conference - Nuremberg, Germany Duration: 7 Oct 2013 → 8 Oct 2013 Conference number: 8 https://ieeexplore.ieee.org/xpl/conhome/6679727/proceeding |
Conference
| Conference | 8th European Microwave Integrated Circuit Conference |
|---|---|
| Number | 8 |
| Country/Territory | Germany |
| City | Nuremberg |
| Period | 07/10/2013 → 08/10/2013 |
| Internet address |
Keywords
- Heterojunction bipolar transistor (HBT)
- Equivalent circuit modelling
- Parameter extraction
- InP
- Transferred substrate