Modeling of InP HBTs in Transferred-Substrate Technology for Millimeter-Wave Applications

Tom Keinicke Johansen, Matthias Rudolph, Thomas Jensen, Tomas Kraemer, Nils Weimann, Frank Schnieder, Victor Krozer, Wolfgang Heinrich

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Abstract

In this paper, the modeling of InP heterojunction bipolar transistors (HBTs) in transferred substrate (TS) technology is investigated. At first, a direct parameter extraction methodology dedicated to III-V based HBTs is employed to determine the small-signal equivalent circuit parameters from measured S-parameters. It is shown that the model prediction of measured S-parameters can be improved in the millimeter-wave frequency range by augmenting the small-signal model with a description of AC current crowding. The extracted elements of the small-signal model structure are employed as a starting point for the extraction of a large-signal model. The developed largesignal model for the TS-HBTs accurately predicts the DC over temperature and small-signal performance over bias as well as
the large-signal performance at millimeter-wave frequencies (77 GHz).
Original languageEnglish
Title of host publicationProceedings of the 8th European Microwave Integrated Circuits Conference
PublisherIEEE
Publication date2013
Pages280-283
ISBN (Print)978-2-87487-032-3
Publication statusPublished - 2013
Event8th European Microwave Integrated Circuits Conference - Nuremberg, Germany
Duration: 7 Oct 20138 Oct 2013

Conference

Conference8th European Microwave Integrated Circuits Conference
CountryGermany
CityNuremberg
Period07/10/201308/10/2013

Keywords

  • Heterojunction bipolar transistor (HBT)
  • Equivalent circuit modelling
  • Parameter extraction
  • InP
  • Transferred substrate

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