Modeling of InP DHBTs in a Transferred-Substrate Technology with Diamond Heat Spreader

Tom Keinicke Johansen; M. Hossain; R. Doerner; H. Yacoub; K. Nosaeva; T. Shivan; W. Heinrich; Viktor Krozer

doi:10.1109/EuMIC48047.2021.00054

Modeling of InP DHBTs in a Transferred-Substrate Technology with Diamond Heat Spreader

Tom Keinicke Johansen^*, M. Hossain, R. Doerner, H. Yacoub, K. Nosaeva, T. Shivan, W. Heinrich, Viktor Krozer

^*Corresponding author for this work

Ferdinand-Braun-Institut

Research output: Chapter in Book/Report/Conference proceeding › Article in proceedings › Research › peer-review

Abstract

This paper presents a compact model for InP DHBTs in a transferred-substrate technology with a diamond heat spreader. The heat spreading layer is introduced to effectively remove the generated heat from the InP DHBTs but will also have a non-negligible influence on the device characteristics. Thermal vias connecting individual collectors of the InP DHBTs to the heat spreading layer act like open-circuited stubs and the electromagnetic environment of the device access structure is modified by the promixity of the diamond layer. The proposed compact modeling approach includes a multiline TRL calibration procedure using on-wafer structures for a definition of reference planes for model extraction, 3D electromagnetic simulation based extraction of the extrinsic parasitic network associated with via transitions and device electrodes in the presence of the diamond heat-spreading layer and the extraction of the remaining parameters of a large-signal HBT model from multi-bias S-parameters and static characteristics. The compact model is verified using a 500 nm InP DHBT by comparison against measured S-parameters and associated transistor gains in the frequency range up to 220 GHz and large-signal measurements at 94 GHz under class-A operation.

Original language	English
Title of host publication	Proceedings of the 15^th European Microwave Integrated Circuits Conference
Publisher	IEEE
Publication date	2021
Pages	169-172
ISBN (Print)	978-2-87487-060-6
DOIs	https://doi.org/10.1109/EuMIC48047.2021.00054
Publication status	Published - 2021
Event	15^th European Microwave Integrated Circuits Conference - Jaarbeurs Exhibition and Convention Centre, Utrecht, Netherlands Duration: 10 Jan 2021 → 15 Jan 2021

Conference

Conference	15^th European Microwave Integrated Circuits Conference
Location	Jaarbeurs Exhibition and Convention Centre
Country/Territory	Netherlands
City	Utrecht
Period	10/01/2021 → 15/01/2021

Keywords

Compact modeling
Diamond
InP double heterojunction bipolar transistor (DHBT)
Millimeter-wave integrated circuits

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10.1109/EuMIC48047.2021.00054

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title = "Modeling of InP DHBTs in a Transferred-Substrate Technology with Diamond Heat Spreader",

abstract = "This paper presents a compact model for InP DHBTs in a transferred-substrate technology with a diamond heat spreader. The heat spreading layer is introduced to effectively remove the generated heat from the InP DHBTs but will also have a non-negligible influence on the device characteristics. Thermal vias connecting individual collectors of the InP DHBTs to the heat spreading layer act like open-circuited stubs and the electromagnetic environment of the device access structure is modified by the promixity of the diamond layer. The proposed compact modeling approach includes a multiline TRL calibration procedure using on-wafer structures for a definition of reference planes for model extraction, 3D electromagnetic simulation based extraction of the extrinsic parasitic network associated with via transitions and device electrodes in the presence of the diamond heat-spreading layer and the extraction of the remaining parameters of a large-signal HBT model from multi-bias S-parameters and static characteristics. The compact model is verified using a 500 nm InP DHBT by comparison against measured S-parameters and associated transistor gains in the frequency range up to 220 GHz and large-signal measurements at 94 GHz under class-A operation.",

keywords = "Compact modeling, Diamond, InP double heterojunction bipolar transistor (DHBT), Millimeter-wave integrated circuits",

author = "Johansen, {Tom Keinicke} and M. Hossain and R. Doerner and H. Yacoub and K. Nosaeva and T. Shivan and W. Heinrich and Viktor Krozer",

year = "2021",

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language = "English",

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booktitle = "Proceedings of the 15th European Microwave Integrated Circuits Conference",

publisher = "IEEE",

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note = "15<sup>th</sup> European Microwave Integrated Circuits Conference, EuMIC 2020 ; Conference date: 10-01-2021 Through 15-01-2021",

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Johansen, TK, Hossain, M, Doerner, R, Yacoub, H, Nosaeva, K, Shivan, T, Heinrich, W & Krozer, V 2021, Modeling of InP DHBTs in a Transferred-Substrate Technology with Diamond Heat Spreader. in Proceedings of the 15^th European Microwave Integrated Circuits Conference. IEEE, pp. 169-172, 15^th European Microwave Integrated Circuits Conference, Utrecht, Netherlands, 10/01/2021. https://doi.org/10.1109/EuMIC48047.2021.00054

TY - GEN

T1 - Modeling of InP DHBTs in a Transferred-Substrate Technology with Diamond Heat Spreader

AU - Johansen, Tom Keinicke

AU - Hossain, M.

AU - Doerner, R.

AU - Yacoub, H.

AU - Nosaeva, K.

AU - Shivan, T.

AU - Heinrich, W.

AU - Krozer, Viktor

PY - 2021

Y1 - 2021

N2 - This paper presents a compact model for InP DHBTs in a transferred-substrate technology with a diamond heat spreader. The heat spreading layer is introduced to effectively remove the generated heat from the InP DHBTs but will also have a non-negligible influence on the device characteristics. Thermal vias connecting individual collectors of the InP DHBTs to the heat spreading layer act like open-circuited stubs and the electromagnetic environment of the device access structure is modified by the promixity of the diamond layer. The proposed compact modeling approach includes a multiline TRL calibration procedure using on-wafer structures for a definition of reference planes for model extraction, 3D electromagnetic simulation based extraction of the extrinsic parasitic network associated with via transitions and device electrodes in the presence of the diamond heat-spreading layer and the extraction of the remaining parameters of a large-signal HBT model from multi-bias S-parameters and static characteristics. The compact model is verified using a 500 nm InP DHBT by comparison against measured S-parameters and associated transistor gains in the frequency range up to 220 GHz and large-signal measurements at 94 GHz under class-A operation.

AB - This paper presents a compact model for InP DHBTs in a transferred-substrate technology with a diamond heat spreader. The heat spreading layer is introduced to effectively remove the generated heat from the InP DHBTs but will also have a non-negligible influence on the device characteristics. Thermal vias connecting individual collectors of the InP DHBTs to the heat spreading layer act like open-circuited stubs and the electromagnetic environment of the device access structure is modified by the promixity of the diamond layer. The proposed compact modeling approach includes a multiline TRL calibration procedure using on-wafer structures for a definition of reference planes for model extraction, 3D electromagnetic simulation based extraction of the extrinsic parasitic network associated with via transitions and device electrodes in the presence of the diamond heat-spreading layer and the extraction of the remaining parameters of a large-signal HBT model from multi-bias S-parameters and static characteristics. The compact model is verified using a 500 nm InP DHBT by comparison against measured S-parameters and associated transistor gains in the frequency range up to 220 GHz and large-signal measurements at 94 GHz under class-A operation.

KW - Compact modeling

KW - Diamond

KW - InP double heterojunction bipolar transistor (DHBT)

KW - Millimeter-wave integrated circuits

U2 - 10.1109/EuMIC48047.2021.00054

DO - 10.1109/EuMIC48047.2021.00054

M3 - Article in proceedings

SN - 978-2-87487-060-6

SP - 169

EP - 172

BT - Proceedings of the 15th European Microwave Integrated Circuits Conference

PB - IEEE

T2 - 15<sup>th</sup> European Microwave Integrated Circuits Conference

Y2 - 10 January 2021 through 15 January 2021

ER -

Modeling of InP DHBTs in a Transferred-Substrate Technology with Diamond Heat Spreader

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