Abstract
In this paper an approach for high-speed InP
DHBT modeling valid to 110 GHz is reported. Electromagnetic
(EM) simulation is applied to predict the embedded
network model caused by pad parasitics. The form of the
parasitic network calls for a 4-step de-embedding approach.
Applying direct parameter extraction on the de-embedded
device response leads to accurate small-signal model description
of the InP DHBT. An parameter extraction approach
is described for the Agilent HBT model, which assures
consistency between large-signal and bias-dependent smallsignal
modeling.
Original language | English |
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Title of host publication | Proceedings of the 2006 IEEE MTT-S |
Publication date | 2006 |
Publication status | Published - 2006 |
Event | 2006 IEEE MTT-S International Microwave Symposium - San Francisco, United States Duration: 11 Jun 2006 → 16 Jun 2006 https://ieeexplore.ieee.org/xpl/conhome/4014788/proceeding |
Conference
Conference | 2006 IEEE MTT-S International Microwave Symposium |
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Country/Territory | United States |
City | San Francisco |
Period | 11/06/2006 → 16/06/2006 |
Internet address |