The dynamical properties of InGaAsP multi-quantum-well electroabsorption modulators are investigated using a comprehensive numerical device model. We calculate the time-dependent sweep-out of photo-generated carriers and the corresponding time-dependent absorption change. The sweep-out is influenced by carriers being recaptured into subsequent wells as they move towards the contacts. This process drastically increases the sweep-out time in our ten-well structure (similar to25 ps) compared to the pure drift-time (similar to1 ps). We also compare the saturation properties of two components with different separate-confinement heterostructures.
|Publication status||Published - 2002|
|Event||19th Nordic Semiconductor Meeting - Gentofte, Denmark|
Duration: 20 May 2001 → 23 May 2001
Conference number: 19
|Conference||19th Nordic Semiconductor Meeting|
|Period||20/05/2001 → 23/05/2001|