Modeling of carrier transport in multi-quantum-well p-i-n modulators

Sune Højfeldt; Jesper Mørk

doi:10.1238/Physica.Topical.101a00161

Modeling of carrier transport in multi-quantum-well p-i-n modulators

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Abstract

The dynamical properties of InGaAsP multi-quantum-well electroabsorption modulators are investigated using a comprehensive numerical device model. We calculate the time-dependent sweep-out of photo-generated carriers and the corresponding time-dependent absorption change. The sweep-out is influenced by carriers being recaptured into subsequent wells as they move towards the contacts. This process drastically increases the sweep-out time in our ten-well structure (similar to25 ps) compared to the pure drift-time (similar to1 ps). We also compare the saturation properties of two components with different separate-confinement heterostructures.

Original language	English
Journal	Physica Scripta
Volume	T101
Pages (from-to)	161-165
ISSN	0031-8949
DOIs	https://doi.org/10.1238/Physica.Topical.101a00161
Publication status	Published - 2002
Event	19th Nordic Semiconductor Meeting - Gentofte, Denmark Duration: 20 May 2001 → 23 May 2001 Conference number: 19

Conference

Conference	19th Nordic Semiconductor Meeting
Number	19
Country/Territory	Denmark
City	Gentofte
Period	20/05/2001 → 23/05/2001

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title = "Modeling of carrier transport in multi-quantum-well p-i-n modulators",

abstract = "The dynamical properties of InGaAsP multi-quantum-well electroabsorption modulators are investigated using a comprehensive numerical device model. We calculate the time-dependent sweep-out of photo-generated carriers and the corresponding time-dependent absorption change. The sweep-out is influenced by carriers being recaptured into subsequent wells as they move towards the contacts. This process drastically increases the sweep-out time in our ten-well structure (similar to25 ps) compared to the pure drift-time (similar to1 ps). We also compare the saturation properties of two components with different separate-confinement heterostructures.",

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year = "2002",

doi = "10.1238/Physica.Topical.101a00161",

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AU - Højfeldt, Sune

AU - Mørk, Jesper

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N2 - The dynamical properties of InGaAsP multi-quantum-well electroabsorption modulators are investigated using a comprehensive numerical device model. We calculate the time-dependent sweep-out of photo-generated carriers and the corresponding time-dependent absorption change. The sweep-out is influenced by carriers being recaptured into subsequent wells as they move towards the contacts. This process drastically increases the sweep-out time in our ten-well structure (similar to25 ps) compared to the pure drift-time (similar to1 ps). We also compare the saturation properties of two components with different separate-confinement heterostructures.

AB - The dynamical properties of InGaAsP multi-quantum-well electroabsorption modulators are investigated using a comprehensive numerical device model. We calculate the time-dependent sweep-out of photo-generated carriers and the corresponding time-dependent absorption change. The sweep-out is influenced by carriers being recaptured into subsequent wells as they move towards the contacts. This process drastically increases the sweep-out time in our ten-well structure (similar to25 ps) compared to the pure drift-time (similar to1 ps). We also compare the saturation properties of two components with different separate-confinement heterostructures.

U2 - 10.1238/Physica.Topical.101a00161

DO - 10.1238/Physica.Topical.101a00161

M3 - Conference article

SN - 0031-8949

VL - T101

SP - 161

EP - 165

JO - Physica Scripta

JF - Physica Scripta

T2 - 19th Nordic Semiconductor Meeting

Y2 - 20 May 2001 through 23 May 2001

ER -

Modeling of carrier transport in multi-quantum-well p-i-n modulators

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