Modeling of carrier transport in multi-quantum-well p-i-n modulators

Sune Højfeldt, Jesper Mørk

Research output: Contribution to journalConference articleResearchpeer-review

Abstract

The dynamical properties of InGaAsP multi-quantum-well electroabsorption modulators are investigated using a comprehensive numerical device model. We calculate the time-dependent sweep-out of photo-generated carriers and the corresponding time-dependent absorption change. The sweep-out is influenced by carriers being recaptured into subsequent wells as they move towards the contacts. This process drastically increases the sweep-out time in our ten-well structure (similar to25 ps) compared to the pure drift-time (similar to1 ps). We also compare the saturation properties of two components with different separate-confinement heterostructures.
Original languageEnglish
JournalPhysica Scripta
VolumeT101
Pages (from-to)161-165
ISSN0031-8949
DOIs
Publication statusPublished - 2002
Event19th Nordic Semiconductor Meeting - Gentofte, Denmark
Duration: 20 May 200123 May 2001
Conference number: 19

Conference

Conference19th Nordic Semiconductor Meeting
Number19
CountryDenmark
CityGentofte
Period20/05/200123/05/2001

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