Millimeter‐wave INP DHBT power amplifier based on power‐optimized cascode configuration

Tom K. Johansen, Lei Yan, Jean‐Yves Dupuy, Virginie Nodjiadjim, Agnieszka Konczykowska, Muriel Riet

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This letter describes the use of a power‐optimized cascode configuration for obtaining maximum output power at millimeter‐wave (mm‐wave) frequencies for a two‐way combined power amplifier (PA). The PA has been fabricated in a high‐speed InP double heterojunction bipolar transistor technology and has a total active emitter area of 68.4 μm2. The experimental results demonstrate a small signal gain of 9.8 dB and saturated output power of more than 18.6 dBm at 72 GHz with a peak power‐added efficiency of 12%. The benefits of the power optimized cascode configuration over the standard cascode configuration at mm‐wave frequencies are confirmed by both simulations and experimental results. © 2013 Wiley Periodicals, Inc. Microwave Opt Technol Lett 55:1178–1182, 2013; View this article online at DOI 10.1002/mop.27477
Original languageEnglish
JournalMicrowave & Optical Technology Letters
Issue number5
Pages (from-to)1178-1182
Publication statusPublished - 2013


  • Heterojunction bipolar transistor (HBT)
  • Millimeter-wave
  • Monolithic microwave integrated circuit
  • Power amplifiers


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