Microscopy of nitride layers grown on diamond

B. Pécz, L. Tóth, Á. Barna, G. Tsiakatouras, A. O. Ajagunna, András Kovács, A. Georgakilas

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    GaN films were grown on three different orientation diamond substrates: (001), (110) and (111). In all three cases the hexagonal GaN is grown with (0001) direction parallel to the surface normal, but otherwise matching to diamond in a different way. The appropriate orientational relationships are determined by selected area electron diffraction. Besides threading dislocations a high number of inversion domains (ID) were formed in some GaN films. The preparation of the diamond surface and the growth conditions proved to affect significantly the formation of crystal defects such as threading dislocations and IDs. Single polarity GaN films with a low density of dislocations were achieved for the optimized growth conditions. The highest quality GaN layers were grown on AlN buffer in which two crystalline variants were nucleated, but one of them was overgrown already in the thickness of the buffer layer.
    Original languageEnglish
    Book seriesJournal of Physics: Conference Series
    Issue number1
    Pages (from-to)012010
    Publication statusPublished - 2011
    Event17th International Conference on Microscopy of Semiconducting Materials - University of Cambridge, Cambridge, United Kingdom
    Duration: 4 Apr 20117 Apr 2011
    Conference number: 17


    Conference17th International Conference on Microscopy of Semiconducting Materials
    LocationUniversity of Cambridge
    CountryUnited Kingdom

    Cite this

    Pécz, B., Tóth, L., Barna, Á., Tsiakatouras, G., Ajagunna, A. O., Kovács, A., & Georgakilas, A. (2011). Microscopy of nitride layers grown on diamond. Journal of Physics: Conference Series, 326(1), 012010. https://doi.org/10.1088/1742-6596/326/1/012010