Microfour-point probe for studying electronic transport through surface states

Christian Leth Petersen, Francois Grey, I. Shiraki, S. Hasegawa

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    Abstract

    Microfour-point probes integrated on silicon chips have been fabricated with probe spacings in the range 4-60 mum. They provide a simple robust device for electrical transport measurements at surfaces, bridging the gap between conventional macroscopic four-point probes and scanning tunneling microscopy. Measurements on Si(111) surfaces in ultrahigh vacuum reveal that the Si(111)-root 3x root3-Ag structure induced by a monolayer of Ag atoms has a four-point resistance two orders of magnitude lower than that of the Si(111)-7x7 clean surface. We attribute this remarkable difference to direct transport through surface states, which is not observed on the macroscopic scale, presumably due to scattering at atomic steps. (C) 2000 American Institute of Physics.
    Original languageEnglish
    JournalApplied Physics Letters
    Volume77
    Issue number23
    Pages (from-to)3782-3784
    ISSN0003-6951
    DOIs
    Publication statusPublished - 2000

    Bibliographical note

    Copyright (2000) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.

    Keywords

    • NANOSTRUCTURES
    • SI
    • CONDUCTION

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