Abstract
The invention regards a method for nanofabricating a SiC-on-insulator material stack, comprising the steps of providing a SiC layer comprising a first proximal surface and a first distal surface, providing a Si substrate comprising a SiOx layer on a second proximal surface, depositing a first adhesive layer and a second adhesive layer of an adhesive material on the first and the second proximal surfaces, respectively, contacting the first adhesive layer and the second adhesive layer with each other, and curing the first and the second adhesive layers for forming a SiC on-insulator material stack.
| Original language | English |
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| IPC | H01L 21/ 762 A I |
| Patent number | WO2024052551 |
| Filing date | 08/09/2023 |
| Country/Territory | International Bureau of the World Intellectual Property Organization (WIPO) |
| Priority date | 09/09/2022 |
| Priority number | EP20220194938 |
| Publication status | Published - 14 Mar 2024 |