Recently, a high mobility quasi-two-dimensional electron gas (q-2DEG) has been reported for the heterointerface between two insulating and nonmagnetic oxides of spinel γ-Al2O3 and perovskite SrTiO3 (STO). Herein, we fabricated the epitaxial heterostructure with Al-based magnetic spinel oxide MAl2O4 (M = Fe, Co, Ni) on perovskite STO. Remarkably, all the MAl2O4 (M = Fe, Co, Ni) films exhibit ferromagnetic behavior up to room temperature. Although the FeAl2O4/STO is insulating, the NiAl2O4/STO and CoAl2O4/STO heterointerfaces are found to be highly metallic and exhibit anomalous Hall effect (AHE) at temperatures below 30 K. Their Hall mobility is as high as 3 × 104 cm2V-1s-1, comparable to that of γ-Al2O3/STO interface. There has been evidence of oxygen-vacancy-related magnetism in γ-Al2O3/STO at temperatures below 5 K, while the enhanced AHE in NiAl2O4/STO and CoAl2O4/STO likely comes from the magnetic proximity effect induced by the top ferromagnetic MAl2O4 spinel films.