Abstract
The epitaxial growth of InAs/InGaAsP/InP quantum dots (QDs) for emission around 1.5 mu m by depositing a thin layer of GaAs on top of the QDs is presented in this letter. The infuence of various growth parameters on the properties of the QDs, in particular, size, shape, chemical composition, and emission wavelength are investigated. Continuous wave lasing in ridge waveguide QD laser structures in the 1.5 mu m wavelength range is demonstrated. VC 2011 American Institute of Physics. [doi:10.1063/1.3634029]
| Original language | English |
|---|---|
| Journal | Applied Physics Letters |
| Volume | 99 |
| Issue number | 10 |
| Pages (from-to) | 101106 |
| ISSN | 0003-6951 |
| DOIs | |
| Publication status | Published - 2011 |
Bibliographical note
Copyright 2011 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.Fingerprint
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