Metal organic vapor-phase epitaxy of InAs/InGaAsP quantum dots for laser applications at 1.5 μm

Elizaveta Semenova; Irina Kulkova; Shima Kadkhodazadeh; Martin Schubert; Kresten Yvind

doi:10.1063/1.3634029

Metal organic vapor-phase epitaxy of InAs/InGaAsP quantum dots for laser applications at 1.5 μm

Elizaveta Semenova, Irina Kulkova, Shima Kadkhodazadeh, Martin Schubert, Kresten Yvind

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Abstract

The epitaxial growth of InAs/InGaAsP/InP quantum dots (QDs) for emission around 1.5 mu m by depositing a thin layer of GaAs on top of the QDs is presented in this letter. The infuence of various growth parameters on the properties of the QDs, in particular, size, shape, chemical composition, and emission wavelength are investigated. Continuous wave lasing in ridge waveguide QD laser structures in the 1.5 mu m wavelength range is demonstrated. VC 2011 American Institute of Physics. [doi:10.1063/1.3634029]

Original language	English
Journal	Applied Physics Letters
Volume	99
Issue number	10
Pages (from-to)	101106
ISSN	0003-6951
DOIs	https://doi.org/10.1063/1.3634029
Publication status	Published - 2011

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title = "Metal organic vapor-phase epitaxy of InAs/InGaAsP quantum dots for laser applications at 1.5 μm",

abstract = "The epitaxial growth of InAs/InGaAsP/InP quantum dots (QDs) for emission around 1.5 mu m by depositing a thin layer of GaAs on top of the QDs is presented in this letter. The infuence of various growth parameters on the properties of the QDs, in particular, size, shape, chemical composition, and emission wavelength are investigated. Continuous wave lasing in ridge waveguide QD laser structures in the 1.5 mu m wavelength range is demonstrated. VC 2011 American Institute of Physics. [doi:10.1063/1.3634029]",

author = "Elizaveta Semenova and Irina Kulkova and Shima Kadkhodazadeh and Martin Schubert and Kresten Yvind",

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T1 - Metal organic vapor-phase epitaxy of InAs/InGaAsP quantum dots for laser applications at 1.5 μm

AU - Semenova, Elizaveta

AU - Kulkova, Irina

AU - Kadkhodazadeh, Shima

AU - Schubert, Martin

AU - Yvind, Kresten

PY - 2011

Y1 - 2011

N2 - The epitaxial growth of InAs/InGaAsP/InP quantum dots (QDs) for emission around 1.5 mu m by depositing a thin layer of GaAs on top of the QDs is presented in this letter. The infuence of various growth parameters on the properties of the QDs, in particular, size, shape, chemical composition, and emission wavelength are investigated. Continuous wave lasing in ridge waveguide QD laser structures in the 1.5 mu m wavelength range is demonstrated. VC 2011 American Institute of Physics. [doi:10.1063/1.3634029]

AB - The epitaxial growth of InAs/InGaAsP/InP quantum dots (QDs) for emission around 1.5 mu m by depositing a thin layer of GaAs on top of the QDs is presented in this letter. The infuence of various growth parameters on the properties of the QDs, in particular, size, shape, chemical composition, and emission wavelength are investigated. Continuous wave lasing in ridge waveguide QD laser structures in the 1.5 mu m wavelength range is demonstrated. VC 2011 American Institute of Physics. [doi:10.1063/1.3634029]

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JO - Applied Physics Letters

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IS - 10

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Metal organic vapor-phase epitaxy of InAs/InGaAsP quantum dots for laser applications at 1.5 μm

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