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Metal-insulator transition in crystalline V2O3 thin films probed at atomic-scale using emission Mössbauer spectroscopy

  • B. Qi*
  • , H. P. Gunnlaugsson
  • , S. Ólafsson
  • , H. P. Gislason
  • , E. B. Thorsteinsson
  • , U. B. Arnalds
  • , R. Mantovan
  • , I. Unzueta l
  • , D. V. Zyabkin
  • , K. Bharuth Ram
  • , K. Johnston
  • , P. B. Krastev
  • , T.E. Mølholt
  • , H. Masenda
  • , A. Tarazaga Martín-Luengo
  • , D. Naidoo
  • , J. Schell
  • *Corresponding author for this work
  • University of Duisburg-Essen
  • University of Iceland
  • University of the Witwatersrand
  • Johannes Kepler University Linz
  • Bulgarian Academy of Sciences
  • Ilmenau University of Technology
  • University of the Basque Country
  • CERN
  • Durban University of Technology
  • Istituto per la Microelettronica e i Microsistemi

Research output: Contribution to journalJournal articleResearchpeer-review

Abstract

Microscopic understanding the metal-to-insulator transition (MIT) in strongly correlated materials is critical to the design and control of modern “beyond silicon” Mott nanodevices. In this work, the local MIT behaviors in single crystalline V2O3 thin films were probed on an atomic scale by online 57Fe emission Mössbauer spectroscopy (eMS) following dilute (
Original languageEnglish
Article number138389
JournalThin Solid Films
Volume714
Number of pages11
ISSN0040-6090
DOIs
Publication statusPublished - 2020

Keywords

  • Metal-insulator transition
  • Divanadium trioxide
  • Thin film
  • Epitaxial strain
  • Emission mössbauer spectroscopy
  • Mott nanodevices

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