Meso-epitaxial solution-growth of self-organizing discotic liquid-crystalline semiconductors

A.M. van de Craats; N. Stutzmann; Oliver Bunk; Martin Meedom Nielsen; M. Watson; K. Müllen; H.D. Chanzy; H. Sirringhaus; R.H. Friend

doi:10.1002/adma.200390114

Meso-epitaxial solution-growth of self-organizing discotic liquid-crystalline semiconductors

A.M. van de Craats
, N. Stutzmann
, Oliver Bunk
, Martin Meedom Nielsen
, M. Watson
, K. Müllen
, H.D. Chanzy
, H. Sirringhaus
, R.H. Friend

Department of Physics

University of Cambridge
Max Planck Institute
Centre de Recherches sur les Macromolécules Végétales

Research output: Contribution to journal › Journal article › Research › peer-review

Abstract

Substituted hexabenzocoronenes (HBCs) form films with supramolecularly ordered columnar stacks that are uniaxially oriented onto poly(tetrafluoroethylene) alignment layers (see Figure). In field-effect transistor (FET) tests, mobilities of up to 10^–3 cm²V^–1s^–1 and high on–off ratios of more than 10⁴ were derived for these aligned HBC films, characteristics superior to FETs prepared from isotropic HBC layers.

Original language	English
Journal	Advanced Materials
Volume	15
Issue number	6
Pages (from-to)	495-499
ISSN	0935-9648
DOIs	https://doi.org/10.1002/adma.200390114
Publication status	Published - 2003

Keywords

Epitaxy, mesoepitaxy
Field-effect transistors
Hexabenzocoronenes
Liquid crystals, discotic
Polymers, conjugated
Semiconductors, organic
Supramolecular structures

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title = "Meso-epitaxial solution-growth of self-organizing discotic liquid-crystalline semiconductors",

abstract = "Substituted hexabenzocoronenes (HBCs) form films with supramolecularly ordered columnar stacks that are uniaxially oriented onto poly(tetrafluoroethylene) alignment layers (see Figure). In field-effect transistor (FET) tests, mobilities of up to 10{\textendash}3 cm2V{\textendash}1s{\textendash}1 and high on{\textendash}off ratios of more than 104 were derived for these aligned HBC films, characteristics superior to FETs prepared from isotropic HBC layers.",

keywords = "5-I nano, Epitaxy, mesoepitaxy, Field-effect transistors, Hexabenzocoronenes, Liquid crystals, discotic, Polymers, conjugated, Semiconductors, organic, Supramolecular structures",

author = "Craats, \{A.M. van de\} and N. Stutzmann and Oliver Bunk and Nielsen, \{Martin Meedom\} and M. Watson and K. M{\"u}llen and H.D. Chanzy and H. Sirringhaus and R.H. Friend",

year = "2003",

doi = "10.1002/adma.200390114",

language = "English",

volume = "15",

pages = "495--499",

journal = "Advanced Materials",

issn = "0935-9648",

publisher = "John Wiley and Sons Inc.",

number = "6",

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TY - JOUR

T1 - Meso-epitaxial solution-growth of self-organizing discotic liquid-crystalline semiconductors

AU - Craats, A.M. van de

AU - Stutzmann, N.

AU - Bunk, Oliver

AU - Nielsen, Martin Meedom

AU - Watson, M.

AU - Müllen, K.

AU - Chanzy, H.D.

AU - Sirringhaus, H.

AU - Friend, R.H.

PY - 2003

Y1 - 2003

N2 - Substituted hexabenzocoronenes (HBCs) form films with supramolecularly ordered columnar stacks that are uniaxially oriented onto poly(tetrafluoroethylene) alignment layers (see Figure). In field-effect transistor (FET) tests, mobilities of up to 10–3 cm2V–1s–1 and high on–off ratios of more than 104 were derived for these aligned HBC films, characteristics superior to FETs prepared from isotropic HBC layers.

AB - Substituted hexabenzocoronenes (HBCs) form films with supramolecularly ordered columnar stacks that are uniaxially oriented onto poly(tetrafluoroethylene) alignment layers (see Figure). In field-effect transistor (FET) tests, mobilities of up to 10–3 cm2V–1s–1 and high on–off ratios of more than 104 were derived for these aligned HBC films, characteristics superior to FETs prepared from isotropic HBC layers.

KW - 5-I nano

KW - Epitaxy, mesoepitaxy

KW - Field-effect transistors

KW - Hexabenzocoronenes

KW - Liquid crystals, discotic

KW - Polymers, conjugated

KW - Semiconductors, organic

KW - Supramolecular structures

U2 - 10.1002/adma.200390114

DO - 10.1002/adma.200390114

M3 - Journal article

SN - 0935-9648

VL - 15

SP - 495

EP - 499

JO - Advanced Materials

JF - Advanced Materials

IS - 6

ER -

Meso-epitaxial solution-growth of self-organizing discotic liquid-crystalline semiconductors

Abstract

Keywords

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