Memory resistive switching in CeO2-based film microstructures patterned by a focused ion beam

A. Velichko, P. Boriskov, A. Grishin, S. Khartsev, Mazher Ahmed Yar, M. Muhammed

Research output: Contribution to journalJournal articleResearchpeer-review


Heteroepitaxial CeO2 (80 nm)/La0.5Sr0.5CoO3 (500 nm) film structure has been pulsed laser deposited on a sapphire substrate. The Ag/CeO2 microjunctions patterned by a focused ion beam on a La0.5Sr0.5CoO3 film exhibit reproducible reversible switching between a high resistance state (OFF) with insulating properties and a semiconducting ormetallic lowresistance state (ON) with resistance ratios up to 104. The influence of micro-scaling and defects formed at the cell boundaries during etching on its electrical characteristics has been analyzed. The appearance of a switching channel at the moment of the electrical forming, responsible for the memory effect, has been proved, along with a mechanism of a self-healing electrical breakdown. © 2014 Elsevier B.V. All rights reserved.

Original languageEnglish
JournalThin Solid Films
Pages (from-to)520–524
Publication statusPublished - 2014


  • Oxide heterostructure
  • Memory resistive switching
  • Focused ion beam

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