Membrane fusion of pH-sensitive liposomes – a quantitative study using giant unilamellar vesicles

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    Abstract

    This article presents a methodology for developing small-signal behavioral electromagnetic (EM) models of p-i-n photodiodes (PDs) for high-speed applications. The EM model includes RC bandwidth limitation effect and transit-time effect. The model is capable of accurately modeling arbitrary complex parasitics of PD chips. It can be used to predict the optical-to-electrical (O/E) response of PDs with various p-i-n junction structures in the frequency domain at the behavioral level. Compared to equivalent circuit models, EM models avoid developing complicated circuit network to represent complex chip parasitics as well as extracting parasitic values and provide straightforward access to EM characteristics of devices.
    Original languageEnglish
    JournalSoft Matter
    Volume7
    Issue number19
    Pages (from-to)9027-9034
    ISSN1744-683X
    DOIs
    Publication statusPublished - 2011

    Keywords

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