Mechanism of single atom switch on silicon.

Ulrich Quaade, Kurt Stokbro, C. Thirstrup, Francois Grey

    Research output: Contribution to journalJournal articleResearchpeer-review


    We demonstrate single atom switch on silicon which operates by displacement of a hydrogen atom on the silicon (100) surface at room temperature. We find two principal effects by which the switch is controlled: a pronounced maximum of the switching probability as function of sample bias and a preferred direction of switching as function of STM tip position. Based on first principles calculations, are show that this behaviour is due to a novel mechanism involving an electronic excitation of a localized surface resonance. (C) 1998 Elsevier Science B.V. All rights reserved.
    Original languageEnglish
    JournalSurface Science
    Issue number3
    Pages (from-to)L1037-L1045
    Publication statusPublished - 1998


    Dive into the research topics of 'Mechanism of single atom switch on silicon.'. Together they form a unique fingerprint.

    Cite this