Mechanism of single atom switch on silicon.

Ulrich Quaade; Kurt Stokbro; C. Thirstrup; Francois Grey

doi:10.1016/S0039-6028(98)00560-3

Mechanism of single atom switch on silicon.

Ulrich Quaade, Kurt Stokbro, C. Thirstrup, Francois Grey

Research output: Contribution to journal › Journal article › Research › peer-review

Abstract

We demonstrate single atom switch on silicon which operates by displacement of a hydrogen atom on the silicon (100) surface at room temperature. We find two principal effects by which the switch is controlled: a pronounced maximum of the switching probability as function of sample bias and a preferred direction of switching as function of STM tip position. Based on first principles calculations, are show that this behaviour is due to a novel mechanism involving an electronic excitation of a localized surface resonance. (C) 1998 Elsevier Science B.V. All rights reserved.

Original language	English
Journal	Surface Science
Volume	415
Issue number	3
Pages (from-to)	L1037-L1045
ISSN	0039-6028
DOIs	https://doi.org/10.1016/S0039-6028(98)00560-3
Publication status	Published - 1998

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title = "Mechanism of single atom switch on silicon.",

abstract = "We demonstrate single atom switch on silicon which operates by displacement of a hydrogen atom on the silicon (100) surface at room temperature. We find two principal effects by which the switch is controlled: a pronounced maximum of the switching probability as function of sample bias and a preferred direction of switching as function of STM tip position. Based on first principles calculations, are show that this behaviour is due to a novel mechanism involving an electronic excitation of a localized surface resonance. (C) 1998 Elsevier Science B.V. All rights reserved. ",

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T1 - Mechanism of single atom switch on silicon.

AU - Quaade, Ulrich

AU - Stokbro, Kurt

AU - Thirstrup, C.

AU - Grey, Francois

PY - 1998

Y1 - 1998

N2 - We demonstrate single atom switch on silicon which operates by displacement of a hydrogen atom on the silicon (100) surface at room temperature. We find two principal effects by which the switch is controlled: a pronounced maximum of the switching probability as function of sample bias and a preferred direction of switching as function of STM tip position. Based on first principles calculations, are show that this behaviour is due to a novel mechanism involving an electronic excitation of a localized surface resonance. (C) 1998 Elsevier Science B.V. All rights reserved.

AB - We demonstrate single atom switch on silicon which operates by displacement of a hydrogen atom on the silicon (100) surface at room temperature. We find two principal effects by which the switch is controlled: a pronounced maximum of the switching probability as function of sample bias and a preferred direction of switching as function of STM tip position. Based on first principles calculations, are show that this behaviour is due to a novel mechanism involving an electronic excitation of a localized surface resonance. (C) 1998 Elsevier Science B.V. All rights reserved.

U2 - 10.1016/S0039-6028(98)00560-3

DO - 10.1016/S0039-6028(98)00560-3

M3 - Journal article

SN - 0039-6028

VL - 415

SP - L1037-L1045

JO - Surface Science

JF - Surface Science

IS - 3

ER -

Mechanism of single atom switch on silicon.

Abstract

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