Measurements with an ultrafast scanning tunnelling microscope on photoexcited semiconductor layers

Ulrich Dieter Felix Keil; Jacob Riis Jensen; Jørn Märcher Hvam

doi:10.1109/CLEO.1998.676142

Measurements with an ultrafast scanning tunnelling microscope on photoexcited semiconductor layers

Ulrich Dieter Felix Keil
, Jacob Riis Jensen
, Jørn Märcher Hvam

Research output: Chapter in Book/Report/Conference proceeding › Article in proceedings › Research › peer-review

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Abstract

Summary form only given. We demonstrate the use of a ultrafast scanning tunnelling microscopes (USTM) for detecting laser-induced field transients on semiconductor layers. In principle, the instrument can detect transient field changes thus far observed as far-field THz radiation in the near-field regime and resolve small signal sources. For photoexcited low temperature (LT) GaAs we can explain the signal by a diffusion current driven by the laser-induced carrier density gradient

Original language	English
Title of host publication	Lasers and Electro-Optics, 1998. CLEO 98. Technical Digest. Summaries of papers presented at the Conference on
Publisher	IEEE
Publication date	1998
Pages	262-263
ISBN (Print)	1-55752-539-0
DOIs	https://doi.org/10.1109/CLEO.1998.676142
Publication status	Published - 1998
Event	Conference on Lasers and Electro-Optics 1998 - San Francisco, CA, United States Duration: 3 May 1998 → 8 May 1998

Conference

Conference	Conference on Lasers and Electro-Optics 1998
Country/Territory	United States
City	San Francisco, CA
Period	03/05/1998 → 08/05/1998

Bibliographical note

Copyright: 1998 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE

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title = "Measurements with an ultrafast scanning tunnelling microscope on photoexcited semiconductor layers",

abstract = "Summary form only given. We demonstrate the use of a ultrafast scanning tunnelling microscopes (USTM) for detecting laser-induced field transients on semiconductor layers. In principle, the instrument can detect transient field changes thus far observed as far-field THz radiation in the near-field regime and resolve small signal sources. For photoexcited low temperature (LT) GaAs we can explain the signal by a diffusion current driven by the laser-induced carrier density gradient",

author = "Keil, \{Ulrich Dieter Felix\} and Jensen, \{Jacob Riis\} and Hvam, \{J{\o}rn M{\"a}rcher\}",

note = "Copyright: 1998 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE; Conference on Lasers and Electro-Optics 1998, CLEO'1998 ; Conference date: 03-05-1998 Through 08-05-1998",

year = "1998",

doi = "10.1109/CLEO.1998.676142",

language = "English",

isbn = "1-55752-539-0",

pages = "262--263",

booktitle = "Lasers and Electro-Optics, 1998. CLEO 98. Technical Digest. Summaries of papers presented at the Conference on",

publisher = "IEEE",

address = "United States",

}

Keil, UDF, Jensen, JR & Hvam, JM 1998, Measurements with an ultrafast scanning tunnelling microscope on photoexcited semiconductor layers. in Lasers and Electro-Optics, 1998. CLEO 98. Technical Digest. Summaries of papers presented at the Conference on. IEEE, pp. 262-263, Conference on Lasers and Electro-Optics 1998, San Francisco, CA, United States, 03/05/1998. https://doi.org/10.1109/CLEO.1998.676142

Measurements with an ultrafast scanning tunnelling microscope on photoexcited semiconductor layers. / Keil, Ulrich Dieter Felix; Jensen, Jacob Riis; Hvam, Jørn Märcher.
Lasers and Electro-Optics, 1998. CLEO 98. Technical Digest. Summaries of papers presented at the Conference on. IEEE, 1998. p. 262-263.

Research output: Chapter in Book/Report/Conference proceeding › Article in proceedings › Research › peer-review

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T1 - Measurements with an ultrafast scanning tunnelling microscope on photoexcited semiconductor layers

AU - Keil, Ulrich Dieter Felix

AU - Jensen, Jacob Riis

AU - Hvam, Jørn Märcher

N1 - Copyright: 1998 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE

PY - 1998

Y1 - 1998

N2 - Summary form only given. We demonstrate the use of a ultrafast scanning tunnelling microscopes (USTM) for detecting laser-induced field transients on semiconductor layers. In principle, the instrument can detect transient field changes thus far observed as far-field THz radiation in the near-field regime and resolve small signal sources. For photoexcited low temperature (LT) GaAs we can explain the signal by a diffusion current driven by the laser-induced carrier density gradient

AB - Summary form only given. We demonstrate the use of a ultrafast scanning tunnelling microscopes (USTM) for detecting laser-induced field transients on semiconductor layers. In principle, the instrument can detect transient field changes thus far observed as far-field THz radiation in the near-field regime and resolve small signal sources. For photoexcited low temperature (LT) GaAs we can explain the signal by a diffusion current driven by the laser-induced carrier density gradient

U2 - 10.1109/CLEO.1998.676142

DO - 10.1109/CLEO.1998.676142

M3 - Article in proceedings

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EP - 263

BT - Lasers and Electro-Optics, 1998. CLEO 98. Technical Digest. Summaries of papers presented at the Conference on

PB - IEEE

T2 - Conference on Lasers and Electro-Optics 1998

Y2 - 3 May 1998 through 8 May 1998

ER -

Measurements with an ultrafast scanning tunnelling microscope on photoexcited semiconductor layers

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