Measurements with an ultrafast scanning tunnelling microscope on photoexcited semiconductor layers

Ulrich Dieter Felix Keil, Jacob Riis Jensen, Jørn Märcher Hvam

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    Abstract

    Summary form only given. We demonstrate the use of a ultrafast scanning tunnelling microscopes (USTM) for detecting laser-induced field transients on semiconductor layers. In principle, the instrument can detect transient field changes thus far observed as far-field THz radiation in the near-field regime and resolve small signal sources. For photoexcited low temperature (LT) GaAs we can explain the signal by a diffusion current driven by the laser-induced carrier density gradient
    Original languageEnglish
    Title of host publicationLasers and Electro-Optics, 1998. CLEO 98. Technical Digest. Summaries of papers presented at the Conference on
    PublisherIEEE
    Publication date1998
    Pages262-263
    ISBN (Print)1-55752-339-0
    DOIs
    Publication statusPublished - 1998
    EventConference on Lasers and Electro-Optics 1998 - San Francisco, CA, United States
    Duration: 3 May 19988 May 1998

    Conference

    ConferenceConference on Lasers and Electro-Optics 1998
    Country/TerritoryUnited States
    CitySan Francisco, CA
    Period03/05/199808/05/1998

    Bibliographical note

    Copyright: 1998 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE

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