Measurements with an ultrafast scanning tunnelling microscope on photoexcited semiconductor layers

Ulrich Dieter Felix Keil, Jacob Riis Jensen, Jørn Märcher Hvam

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    Summary form only given. We demonstrate the use of a ultrafast scanning tunnelling microscopes (USTM) for detecting laser-induced field transients on semiconductor layers. In principle, the instrument can detect transient field changes thus far observed as far-field THz radiation in the near-field regime and resolve small signal sources. For photoexcited low temperature (LT) GaAs we can explain the signal by a diffusion current driven by the laser-induced carrier density gradient
    Original languageEnglish
    Title of host publicationLasers and Electro-Optics, 1998. CLEO 98. Technical Digest. Summaries of papers presented at the Conference on
    Publication date1998
    ISBN (Print)1-55752-339-0
    Publication statusPublished - 1998
    EventConference on Lasers and Electro-Optics 1998 - San Francisco, CA, United States
    Duration: 3 May 19988 May 1998


    ConferenceConference on Lasers and Electro-Optics 1998
    Country/TerritoryUnited States
    CitySan Francisco, CA

    Bibliographical note

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