Measurement of the energetics of metal film growth on a semiconductor: Ag/ Si(100)-2x1

D.E. Starr, J.T. Ranney, Jane Hvolbæk Larsen, J.E. Musgrove, C.T. Campbell

Research output: Contribution to journalJournal articleResearchpeer-review

Abstract

The first direct calorimetric measurements of the energetics of metal film growth on a semiconductor surface are presented. The heat of adsorption of Ag on Si(100)-(2 x 1) at 300 K decreases from similar to 347 to 246 kJ/mol with coverage in the first monolayer (ML) due to overlap of substrate strain from nearby Ag islands. It then rises quickly toward the bulk sublimation enthalpy (285 kJ/mol) as 3D particles grow. A wetting layer grows to 1.0 ML, but is metastable above similar to0.55 ML and dewets when kinetics permit. This may be common when adsorbate islands induce a large strain in the substrate surface nearby.
Original languageEnglish
JournalPhysical Review Letters
Volume87
Issue number10
Pages (from-to)106102
ISSN0031-9007
DOIs
Publication statusPublished - 2001

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