Measurement of dopant activation and defects in sub 1keV B dopes samples using lon beam channeling

L. Vanamurthy, M. Huang, H. Bakrhu, T. Furukawa, N. Berliner, J. Herman, Z. Zhu, P. Ronsheim, B. Doris, M. Li, Dirch Hjorth Petersen, J.K. Christensen, P.F. Nielsen

    Research output: Contribution to conferencePosterResearchpeer-review

    Original languageEnglish
    Publication date2009
    Publication statusPublished - 2009
    EventInternational Workshop on INSIGHT in Semiconductor Device Fabrication, Metrology, and Modeling - Napa Valley, United States
    Duration: 26 Apr 200929 Apr 2009

    Workshop

    WorkshopInternational Workshop on INSIGHT in Semiconductor Device Fabrication, Metrology, and Modeling
    CountryUnited States
    CityNapa Valley
    Period26/04/200929/04/2009

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