MBE growth and properties of AlGaAs nanowires with InGaAs quantum dots on silicon

R.R. Reznik; I.V. Ilkiv; K.P. Kotlyar; V.O. Grodchin; E.V. Ubyivovk; N.S. Dragunova; N.V. Kryzhanovskaya; N. Akopian; G.E. Cirlin

doi:10.1109/ICLO54117.2022.9839992

MBE growth and properties of AlGaAs nanowires with InGaAs quantum dots on silicon

R.R. Reznik, I.V. Ilkiv, K.P. Kotlyar, V.O. Grodchin, E.V. Ubyivovk, N.S. Dragunova, N.V. Kryzhanovskaya, N. Akopian, G.E. Cirlin

Research output: Contribution to conference › Paper › Research › peer-review

Abstract

AlGaAs nanowires with InGaAs quantum dots were grown on silicon by molecular-beam epitaxy under different growth conditions for the first time. The results of physical properties studies showed that by changing the quantum dots growth time, the ratio of III materials fluxes and the growth temperature it is possible to control the size and composition of quantum dots.

Original language	English
Publication date	24 Jun 2022
Number of pages	1
DOIs	https://doi.org/10.1109/ICLO54117.2022.9839992
Publication status	Published - 24 Jun 2022
Event	20^th International Conference Laser Optics - Saint Petersburg, Russian Federation Duration: 20 Jun 2022 → 24 Jun 2022

Conference

Conference	20^th International Conference Laser Optics
Country/Territory	Russian Federation
City	Saint Petersburg
Period	20/06/2022 → 24/06/2022

Keywords

Laser theory
Quantum dot lasers
Temperature
Quantum dots
Molecular beam epitaxial growth
Optics
Silicon

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10.1109/ICLO54117.2022.9839992

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Reznik, R. R., Ilkiv, I. V., Kotlyar, K. P., Grodchin, V. O., Ubyivovk, E. V., Dragunova, N. S., Kryzhanovskaya, N. V., Akopian, N., & Cirlin, G. E. (2022). MBE growth and properties of AlGaAs nanowires with InGaAs quantum dots on silicon. Paper presented at 20^th International Conference Laser Optics, Saint Petersburg, Russian Federation. https://doi.org/10.1109/ICLO54117.2022.9839992

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abstract = "AlGaAs nanowires with InGaAs quantum dots were grown on silicon by molecular-beam epitaxy under different growth conditions for the first time. The results of physical properties studies showed that by changing the quantum dots growth time, the ratio of III materials fluxes and the growth temperature it is possible to control the size and composition of quantum dots.",

keywords = "Laser theory, Quantum dot lasers, Temperature, Quantum dots, Molecular beam epitaxial growth, Optics, Silicon",

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doi = "10.1109/ICLO54117.2022.9839992",

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Reznik, RR, Ilkiv, IV, Kotlyar, KP, Grodchin, VO, Ubyivovk, EV, Dragunova, NS, Kryzhanovskaya, NV, Akopian, N & Cirlin, GE 2022, 'MBE growth and properties of AlGaAs nanowires with InGaAs quantum dots on silicon', Paper presented at 20^th International Conference Laser Optics, Saint Petersburg, Russian Federation, 20/06/2022 - 24/06/2022. https://doi.org/10.1109/ICLO54117.2022.9839992

TY - CONF

T1 - MBE growth and properties of AlGaAs nanowires with InGaAs quantum dots on silicon

AU - Reznik, R.R.

AU - Ilkiv, I.V.

AU - Kotlyar, K.P.

AU - Grodchin, V.O.

AU - Ubyivovk, E.V.

AU - Dragunova, N.S.

AU - Kryzhanovskaya, N.V.

AU - Akopian, N.

AU - Cirlin, G.E.

PY - 2022/6/24

Y1 - 2022/6/24

N2 - AlGaAs nanowires with InGaAs quantum dots were grown on silicon by molecular-beam epitaxy under different growth conditions for the first time. The results of physical properties studies showed that by changing the quantum dots growth time, the ratio of III materials fluxes and the growth temperature it is possible to control the size and composition of quantum dots.

AB - AlGaAs nanowires with InGaAs quantum dots were grown on silicon by molecular-beam epitaxy under different growth conditions for the first time. The results of physical properties studies showed that by changing the quantum dots growth time, the ratio of III materials fluxes and the growth temperature it is possible to control the size and composition of quantum dots.

KW - Laser theory

KW - Quantum dot lasers

KW - Temperature

KW - Quantum dots

KW - Molecular beam epitaxial growth

KW - Optics

KW - Silicon

U2 - 10.1109/ICLO54117.2022.9839992

DO - 10.1109/ICLO54117.2022.9839992

M3 - Paper

T2 - 20<sup>th</sup> International Conference Laser Optics

Y2 - 20 June 2022 through 24 June 2022

ER -

MBE growth and properties of AlGaAs nanowires with InGaAs quantum dots on silicon

Abstract

Conference

Keywords

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