Mapping the electrical properties of semiconductor junctions - the electron holographic approach

A.C. Twitchett-Harrison, Rafal E. Dunin-Borkowski, P.A. Midgley

    Research output: Contribution to journalJournal articleResearchpeer-review

    Abstract

    The need to determine the electrical properties of semiconductor junctions with high spatial resolution Is as pressing now as ever. One technique that offers the possibility of quantitative high-resolution mapping of two- and three-dimensional electrostatic potential distributions is off-axis electron holography. In this study, we review some of the Issues associated with interpreting phase shifts measured using off-axis electron holography, and we describe how a quantitative determination of the dopant-related electrostatic potential can be achieved for device Structures. Issues that include the presence of Surface "dead" layers, external electrostatic fringing fields. variations in specimen thickness and dynamical diffraction are discussed, and their impact on the quantification of results obtained using off-axis electron holography is examined.
    Original languageEnglish
    JournalScanning
    Volume30
    Issue number4
    Pages (from-to)299-309
    ISSN0161-0457
    DOIs
    Publication statusPublished - 2008

    Keywords

    • tomography
    • metrology
    • three-dimensional reconstruction
    • holography

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